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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IPC70N04S54R6ATMA1

IPC70N04S54R6ATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 70A 8TDSON-34

4617
IRF1607PBF

IRF1607PBF

IR (Infineon Technologies)

MOSFET N-CH 75V 142A TO220AB

0
IRFP7718PBF

IRFP7718PBF

IR (Infineon Technologies)

MOSFET N-CH 75V 195A TO247AC

0
IPA65R190E6XKSA1

IPA65R190E6XKSA1

IR (Infineon Technologies)

PFET, 650V, 0.19OHM, 1-ELEMENT,

0
IPN50R950CEATMA1

IPN50R950CEATMA1

IR (Infineon Technologies)

MOSFET N-CH 500V 6.6A SOT223

1917
IPP042N03LGXKSA1

IPP042N03LGXKSA1

IR (Infineon Technologies)

MOSFET N-CH 30V 70A TO220-3

596
IPB015N08N5ATMA1

IPB015N08N5ATMA1

IR (Infineon Technologies)

MOSFET N-CH 80V 180A TO263-7

2222
IRFS4610TRLPBF

IRFS4610TRLPBF

IR (Infineon Technologies)

MOSFET N-CH 100V 73A D2PAK

2437
IPA65R600C6

IPA65R600C6

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

890
IPP60R520CP

IPP60R520CP

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

500
SPU07N60C3BKMA1

SPU07N60C3BKMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 7.3A TO251-3

987
IRFR24N15DTRPBF

IRFR24N15DTRPBF

IR (Infineon Technologies)

MOSFET N-CH 150V 24A DPAK

1375
IPP220N25NFD

IPP220N25NFD

IR (Infineon Technologies)

MOSFET N-CH 250V 61A TO220-3

0
IPAN50R500CEXKSA1

IPAN50R500CEXKSA1

IR (Infineon Technologies)

MOSFET N-CH 500V 11.1A TO220

127
IPDD60R045CFD7XTMA1

IPDD60R045CFD7XTMA1

IR (Infineon Technologies)

MOSFET N-CH 600V 61A HDSOP-10

0
AUIRF3504

AUIRF3504

IR (Infineon Technologies)

AUTOMOTIVE HEXFET N CHANNEL

11711
IRF7201TRPBF

IRF7201TRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 7.3A 8SO

7724
IPD70R600CEAUMA1

IPD70R600CEAUMA1

IR (Infineon Technologies)

MOSFET N-CH 700V 10.5A TO252-3

0
IPB015N04NGATMA1

IPB015N04NGATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 120A D2PAK

4520
IPP65R125C7

IPP65R125C7

IR (Infineon Technologies)

IPP65R125 - 650V AND 700V COOLMO

271

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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