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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IPB180N04S302ATMA1

IPB180N04S302ATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 180A D2PAK

1431
IPP041N04NGXKSA1

IPP041N04NGXKSA1

IR (Infineon Technologies)

MOSFET N-CH 40V 80A TO220-3

575
SPW55N80C3FKSA1

SPW55N80C3FKSA1

IR (Infineon Technologies)

MOSFET N-CH 800V 54.9A TO247-3

1007
IRLU3802PBF

IRLU3802PBF

IR (Infineon Technologies)

HEXFET POWER MOSFET

7178
IRF7815TRPBF

IRF7815TRPBF

IR (Infineon Technologies)

MOSFET N-CH 150V 5.1A 8SO

7700
IPD50N06S214ATMA1

IPD50N06S214ATMA1

IR (Infineon Technologies)

MOSFET N-CH 55V 50A TO252-3

2296
IPD050N10N5ATMA1

IPD050N10N5ATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 80A TO252-3

20
IPD60R170CFD7ATMA1

IPD60R170CFD7ATMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 14A TO252-3

573
IRLR8743TRPBF

IRLR8743TRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 160A DPAK

0
IPP60R105CFD7XKSA1

IPP60R105CFD7XKSA1

IR (Infineon Technologies)

MOSFET N CH

275
IPB009N03LGATMA1

IPB009N03LGATMA1

IR (Infineon Technologies)

MOSFET N-CH 30V 180A TO263-7

0
BSC010NE2LSATMA1

BSC010NE2LSATMA1

IR (Infineon Technologies)

MOSFET N-CH 25V 39A/100A TDSON

10427
IPD90P04P405ATMA1

IPD90P04P405ATMA1

IR (Infineon Technologies)

MOSFET P-CH 40V 90A TO252-3

0
IPL65R099C7AUMA1

IPL65R099C7AUMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 21A 4VSON

1794
IRF1405ZLPBF

IRF1405ZLPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 75A TO262

1443
IPD60R380E6ATMA2

IPD60R380E6ATMA2

IR (Infineon Technologies)

IPD60R380 - COOLMOS N-CHANNEL

12500
IPS70R600P7SAKMA1

IPS70R600P7SAKMA1

IR (Infineon Technologies)

MOSFET N-CH 700V 8.5A TO251-3

1686
IPP80N03S4L03AKSA1

IPP80N03S4L03AKSA1

IR (Infineon Technologies)

MOSFET N-CH 30V 80A TO220-3

650
IRLR3636TRLPBF

IRLR3636TRLPBF

IR (Infineon Technologies)

MOSFET N-CH 60V 50A DPAK

2788
IPW65R190C7XKSA1

IPW65R190C7XKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 13A TO247-3

230

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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