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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IPW90R800C3

IPW90R800C3

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

16075
IRF7241TRPBF

IRF7241TRPBF

IR (Infineon Technologies)

MOSFET P-CH 40V 6.2A 8SO

2752
IPB100N06S2L05ATMA2

IPB100N06S2L05ATMA2

IR (Infineon Technologies)

MOSFET N-CH 55V 100A TO263-3

2000
BSO080P03SHXUMA1

BSO080P03SHXUMA1

IR (Infineon Technologies)

MOSFET P-CH 30V 12.6A 8DSO

2252
IPP80N06S2L11AKSA2

IPP80N06S2L11AKSA2

IR (Infineon Technologies)

MOSFET N-CH 55V 80A TO220-3-1

26000
IPT029N08N5ATMA1

IPT029N08N5ATMA1

IR (Infineon Technologies)

MOSFET N-CH 80V 52A/169A HSOF-8

1800
IRFH6200TRPBF

IRFH6200TRPBF

IR (Infineon Technologies)

MOSFET N-CH 20V 49A/100A 8PQFN

0
IRLR120NTRLPBF

IRLR120NTRLPBF

IR (Infineon Technologies)

MOSFET N-CH 100V 10A DPAK

0
AUIRF3710ZSTRL

AUIRF3710ZSTRL

IR (Infineon Technologies)

MOSFET N-CH 100V 59A D2PAK

4234
SPB80N03S2L05

SPB80N03S2L05

IR (Infineon Technologies)

80A, 30V, N-CHANNEL, MOSFET

72559
IPP60R600P7

IPP60R600P7

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

500
SPB04N60S5ATMA1

SPB04N60S5ATMA1

IR (Infineon Technologies)

MOSFET N-CH 600V 4.5A TO263-3

47000
IPLK70R900P7ATMA1

IPLK70R900P7ATMA1

IR (Infineon Technologies)

MOSFET N-CH 700V TDSON-8

0
SPP06N80C3XKSA1

SPP06N80C3XKSA1

IR (Infineon Technologies)

MOSFET N-CH 800V 6A TO220-3

8122
BSZ088N03LSG

BSZ088N03LSG

IR (Infineon Technologies)

BSZ088N03 - 12V-300V N-CHANNEL P

3871
IPP60R520C6

IPP60R520C6

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

0
BSZ100N06NSATMA1

BSZ100N06NSATMA1

IR (Infineon Technologies)

MOSFET N-CH 60V 40A TSDSON

0
IRF3704SPBF

IRF3704SPBF

IR (Infineon Technologies)

MOSFET N-CH 20V 77A D2PAK

0
IPU80R600P7AKMA1

IPU80R600P7AKMA1

IR (Infineon Technologies)

MOSFET N-CH 800V 8A TO251-3

1500
IRFB260NPBF

IRFB260NPBF

IR (Infineon Technologies)

MOSFET N-CH 200V 56A TO220AB

8

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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