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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IPP06N03LA

IPP06N03LA

IR (Infineon Technologies)

MOSFET N-CH 25V 50A TO220-3

0
IRF7821TRPBF

IRF7821TRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 13.6A 8SO

78105
IPI90R500C3XKSA2

IPI90R500C3XKSA2

IR (Infineon Technologies)

MOSFET N-CH 900V 11A TO262-3

0
AUIRFR3504Z

AUIRFR3504Z

IR (Infineon Technologies)

AUIRFR3504 - 20V-40V N-CHANNEL A

8989
IPB80N06S209ATMA2

IPB80N06S209ATMA2

IR (Infineon Technologies)

MOSFET N-CH 55V 80A TO263-3-2

1351
IRFR18N15DTRLP-INF

IRFR18N15DTRLP-INF

IR (Infineon Technologies)

HEXFET SMPS POWER MOSFET

3765
IPW60R120C7XKSA1

IPW60R120C7XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 19A TO247-3

5520
IRF3205PBF

IRF3205PBF

IR (Infineon Technologies)

MOSFET N-CH 55V 110A TO220AB

0
IRFU1205PBF

IRFU1205PBF

IR (Infineon Technologies)

HEXFET N-CHANNEL POWER MOSFET

930
IPB100N06S3-04

IPB100N06S3-04

IR (Infineon Technologies)

MOSFET N-CH 55V 100A TO263-3

1000
BSC0804LSATMA1

BSC0804LSATMA1

IR (Infineon Technologies)

100V, N-CH MOSFET, LOGIC LEVEL,

4541
IRFR7746TRPBF

IRFR7746TRPBF

IR (Infineon Technologies)

MOSFET N-CH 75V 56A DPAK

1213
IPD06N03LAG

IPD06N03LAG

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

25758
IPL65R165CFDAUMA1

IPL65R165CFDAUMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 21.3A 4VSON

11434
BSZ060NE2LSATMA1

BSZ060NE2LSATMA1

IR (Infineon Technologies)

MOSFET N-CH 25V 12A/40A TSDSON

38371
IRFU220NPBF

IRFU220NPBF

IR (Infineon Technologies)

MOSFET N-CH 200V 5A IPAK

5756
AUIRFS3607TRL

AUIRFS3607TRL

IR (Infineon Technologies)

MOSFET N-CH 75V 80A D2PAK

8800
IPS80R2K4P7AKMA1

IPS80R2K4P7AKMA1

IR (Infineon Technologies)

MOSFET N-CH 800V 2.5A TO251-3

10445
IRFU3910PBF

IRFU3910PBF

IR (Infineon Technologies)

MOSFET N-CH 100V 16A IPAK

0
IPP023N08N5AKSA1

IPP023N08N5AKSA1

IR (Infineon Technologies)

MOSFET N-CH 80V 120A TO220-3

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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