IPB180N04S302ATMA1

Manufacturer Part IPB180N04S302ATMA1
Manufacturer IR (Infineon Technologies)
Description MOSFET N-CH 40V 180A D2PAK
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet IPB180N04S302ATMA1 PDF
Availability 1431 pieces
Shipped from HK warehouse
Expected Shipping Dec 11 - Dec 15 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:1.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs:210 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:14300 pF @ 25 V
FET Feature:-
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK (7-Lead)
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
More Information
IPB180N04S302ATMA1
IPB180N04S302ATMA1
IR (Infineon Technologies) IPB180N04S302ATMA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
IPB180N04S302ATMA1 PDF
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DHL 2-5 days
Fedex 2-5 days
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EMS 3-7 days
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