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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
BSC037N08NS5ATMA1

BSC037N08NS5ATMA1

IR (Infineon Technologies)

MOSFET N-CH 80V 100A TDSON

286
IPI052NE7N3G

IPI052NE7N3G

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

396
BSZ120P03NS3GATMA1

BSZ120P03NS3GATMA1

IR (Infineon Technologies)

MOSFET P-CH 30V 11A/40A 8TSDSON

1786
AUIRFSL8407

AUIRFSL8407

IR (Infineon Technologies)

MOSFET N-CH 40V 195A TO262

17873
IRF640NSPBF

IRF640NSPBF

IR (Infineon Technologies)

MOSFET N-CH 200V 18A D2PAK

0
BSZ180P03NS3EGATMA1

BSZ180P03NS3EGATMA1

IR (Infineon Technologies)

MOSFET P-CH 30V 9A/39.5A TSDSON

4995
AUIRLS3034-7TRL

AUIRLS3034-7TRL

IR (Infineon Technologies)

MOSFET N-CH 40V 240A D2PAK

20000
IPD80R1K0CEATMA1

IPD80R1K0CEATMA1

IR (Infineon Technologies)

MOSFET N-CH 800V 5.7A TO252-3

0
IRFS7787TRLPBF

IRFS7787TRLPBF

IR (Infineon Technologies)

MOSFET N-CH 75V 76A D2PAK

650
BSZ021N04LS6ATMA1

BSZ021N04LS6ATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 25A/40A TSDSON

0
SPA16N50C3XKSA1

SPA16N50C3XKSA1

IR (Infineon Technologies)

MOSFET N-CH 560V 16A TO220-3

496
IPS060N03LGAKMA1

IPS060N03LGAKMA1

IR (Infineon Technologies)

MOSFET N-CH 30V 50A TO251-3

6000
IPI22N03S4L15AKSA1

IPI22N03S4L15AKSA1

IR (Infineon Technologies)

MOSFET N-CH 30V 22A TO262-3

17500
IRLIZ34NPBF

IRLIZ34NPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 22A TO220AB FP

1279
IRL540NSPBF

IRL540NSPBF

IR (Infineon Technologies)

HEXFET POWER MOSFET

190
IRFR5305PBF

IRFR5305PBF

IR (Infineon Technologies)

AUTOMOTIVE HEXFET P-CHANNEL

0
BSC015NE2LS5IATMA1

BSC015NE2LS5IATMA1

IR (Infineon Technologies)

MOSFET N-CH 25V 33A/100A TDSON

0
BSS225H6327XTSA1

BSS225H6327XTSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 90MA SOT89

0
IRFB7437PBF

IRFB7437PBF

IR (Infineon Technologies)

MOSFET N-CH 40V 195A TO220AB

0
IPD60R2K0C6BTMA1

IPD60R2K0C6BTMA1

IR (Infineon Technologies)

MOSFET N-CH 600V 2.4A TO252-3

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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