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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IPAN60R360PFD7SXKSA1

IPAN60R360PFD7SXKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 10A TO220

923
SPA06N60C3XKSA1

SPA06N60C3XKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 6.2A TO220-FP

0
BUZ103SL

BUZ103SL

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

58489
ISZ019N03L5SATMA1

ISZ019N03L5SATMA1

IR (Infineon Technologies)

MOSFET N-CH 30V 22A/40A TSDSON

4702
IPP65R150CFDXKSA2

IPP65R150CFDXKSA2

IR (Infineon Technologies)

MOSFET N-CH 650V 22.4A TO220-3

475
IRF7326D2TRPBF

IRF7326D2TRPBF

IR (Infineon Technologies)

MOSFET P-CH 30V 3.6A 8SO

2345
IRFS7434TRL7PP

IRFS7434TRL7PP

IR (Infineon Technologies)

MOSFET N-CH 40V 240A D2PAK-7

61
IPP60R060C7XKSA1

IPP60R060C7XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 35A TO220-3

698
IPI126N10N3 G

IPI126N10N3 G

IR (Infineon Technologies)

MOSFET N-CH 100V 58A TO262-3

956
BSZ042N06NSATMA1

BSZ042N06NSATMA1

IR (Infineon Technologies)

MOSFET N-CH 60V 17A/40A TSDSON

10830
BSO080P03NS3G

BSO080P03NS3G

IR (Infineon Technologies)

BSO080P03 - 20V-250V P-CHANNEL P

900
IPD50N10S3L16ATMA1

IPD50N10S3L16ATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 50A TO252-3

1
IRF7780MTRPBF

IRF7780MTRPBF

IR (Infineon Technologies)

MOSFET N-CH 75V 89A DIRECTFET

1133
IPD60R360PFD7SAUMA1

IPD60R360PFD7SAUMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 10A TO252-3

2420
IPN70R360P7SATMA1

IPN70R360P7SATMA1

IR (Infineon Technologies)

MOSFET N-CH 700V 12.5A SOT223

0
IRL520NSTRLPBF

IRL520NSTRLPBF

IR (Infineon Technologies)

MOSFET N-CH 100V 10A D2PAK

0
BSC059N04LS6ATMA1

BSC059N04LS6ATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 17A TDSON

48387
BUZ32H3045A

BUZ32H3045A

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

1249
IRFU3607PBF

IRFU3607PBF

IR (Infineon Technologies)

MOSFET N-CH 75V 56A IPAK

0
IRL1404STRLPBF

IRL1404STRLPBF

IR (Infineon Technologies)

MOSFET N-CH 40V 160A D2PAK

800

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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