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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IRLR6225TRPBF

IRLR6225TRPBF

IR (Infineon Technologies)

MOSFET N-CH 20V 100A DPAK

44
BSC320N20NS3GATMA1

BSC320N20NS3GATMA1

IR (Infineon Technologies)

MOSFET N-CH 200V 36A TDSON-8

405
IPP50R350CPXKSA1

IPP50R350CPXKSA1

IR (Infineon Technologies)

COOLMOS 10A, 500V N-CHANNEL

0
IRF1104LPBF

IRF1104LPBF

IR (Infineon Technologies)

MOSFET N-CH 40V 100A TO262

0
IPP80N06S2L-06

IPP80N06S2L-06

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

0
IRLL014NPBF

IRLL014NPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 2A SOT223

0
IPP80P04P4L08AKSA1

IPP80P04P4L08AKSA1

IR (Infineon Technologies)

OPTIMOS POWER-TRANSISTOR

14736
IRF135SA204

IRF135SA204

IR (Infineon Technologies)

MOSFET N-CH 135V 160A D2PAK-7

0
BSC097N06NSATMA1

BSC097N06NSATMA1

IR (Infineon Technologies)

MOSFET N-CH 60V 46A TDSON-8-6

15894
BSC010N04LSIATMA1

BSC010N04LSIATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 37A/100A TDSON

0
BSL296SNH6327XTSA1

BSL296SNH6327XTSA1

IR (Infineon Technologies)

1.4A, 100V, 0.56OHM, N-CHANNEL,

109950
IRF7726TRPBF

IRF7726TRPBF

IR (Infineon Technologies)

MOSFET P-CH 30V 7A MICRO8

14542
IRFR3707PBF

IRFR3707PBF

IR (Infineon Technologies)

MOSFET N-CH 30V 61A DPAK

0
IPP70N12S311AKSA1

IPP70N12S311AKSA1

IR (Infineon Technologies)

IPP70N12 - 120V-300V N-CHANNEL A

28346
IPP65R310CFDXKSA1

IPP65R310CFDXKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 11.4A TO220-3

0
IPW50R280CE

IPW50R280CE

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

124425
IRFI4110GPBF

IRFI4110GPBF

IR (Infineon Technologies)

MOSFET N-CH 100V 72A TO220AB FP

13136
IPU95R450P7AKMA1

IPU95R450P7AKMA1

IR (Infineon Technologies)

MOSFET N-CH 950V 14A TO251-3

351
BSS159NH6327XTSA2

BSS159NH6327XTSA2

IR (Infineon Technologies)

MOSFET N-CH 60V 230MA SOT23-3

9564
IRFH7191TRPBF

IRFH7191TRPBF

IR (Infineon Technologies)

MOSFET N-CH 100V 15A/80A PQFN

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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