IMW120R045M1XKSA1

Manufacturer Part IMW120R045M1XKSA1
Manufacturer IR (Infineon Technologies)
Description SICFET N-CH 1.2KV 52A TO247-3
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 251 pieces
Shipped from HK warehouse
Expected Shipping Dec 07 - Dec 11 2025
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Product Attributes
Type Description
Series:CoolSiC™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1.2 kV
Current - Continuous Drain (Id) @ 25°C:52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V
Rds On (Max) @ Id, Vgs:59mOhm @ 20A, 15V
Vgs(th) (Max) @ Id:5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 15 V
Vgs (Max):+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds:1.9 nF @ 800 V
FET Feature:-
Power Dissipation (Max):228W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-41
Package / Case:TO-247-3
More Information
IMW120R045M1XKSA1
IMW120R045M1XKSA1
IR (Infineon Technologies) IMW120R045M1XKSA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
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