Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Part Number	Description / PDF	Quantity
PBLS2004D,115 Nexperia	TRANS PREBIAS 1NPN 1PNP 6TSOP	5342
NSBC114YDP6T5G Sanyo Semiconductor/ON Semiconductor	TRANS PREBIAS 2NPN 50V SOT963	1118
NSTB60BDW1T1G Sanyo Semiconductor/ON Semiconductor	TRANS PREBIAS 1NPN 1PNP 50V SC88	5668
MUN5112DW1T1G Sanyo Semiconductor/ON Semiconductor	TRANS PREBIAS 2PNP 50V SC88	0
RN1968(TE85L,F) Toshiba Electronic Devices and Storage Corporation	TRANS 2NPN PREBIAS 0.2W US6	3000
RN49A1(TE85L,F) Toshiba Electronic Devices and Storage Corporation	PNP + NPN BRT, Q1BSR=2.2KΩ, Q1BE	3000
NSBA123JDXV6T1	SMALL SIGNAL BIPOLAR TRANSISTOR	171949
UMA11NTR ROHM Semiconductor	TRANS PREBIAS DUAL PNP UMT5	0
UMG2NTR ROHM Semiconductor	TRANS 2NPN PREBIAS 0.15W UMT5	2932
RN2610(TE85L,F) Toshiba Electronic Devices and Storage Corporation	TRANS 2PNP PREBIAS 0.3W SM6	2945
RN2606(TE85L,F) Toshiba Electronic Devices and Storage Corporation	TRANS 2PNP PREBIAS 0.3W SM6	1030
UP04214G0L Panasonic	TRANS PREBIAS DUAL NPN SSMINI6	14296
NSVMUN5312DW1T3G Sanyo Semiconductor/ON Semiconductor	TRANS NPN/PNP 50V BIPO SC88-6	0
PEMB30,115 Nexperia	TRANS PREBIAS 2PNP 50V SOT666	0
RN4604(TE85L,F) Toshiba Electronic Devices and Storage Corporation	TRANS NPN/PNP PREBIAS 0.3W SM6	2580
RN1910FE,LF(CT Toshiba Electronic Devices and Storage Corporation	TRANS 2NPN PREBIAS 0.1W ES6	3730
IMD14T108 ROHM Semiconductor	TRANS NPN/PNP PREBIAS 0.3W SMT6	0
NSVMUN531335DW1T1G Sanyo Semiconductor/ON Semiconductor	TRANS PREBIAS NPN/PNP 50V 6TSSOP	0
PEMH17,115 NXP Semiconductors	NOW NEXPERIA PEMH17 - SMALL SIGN	24000
RN1911FETE85LF Toshiba Electronic Devices and Storage Corporation	TRANS 2NPN PREBIAS 0.1W ES6	3645

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
NPN Arrays	Common-emitter configuration with integrated base resistors for switching	Digital logic circuits, relay drivers
PNP Arrays	Negative voltage switching with matched resistor ratios	Motor control, battery management
Complementary Pairs	Matched NPN/PNP transistors for push-pull amplifiers	Audio amplifiers, power supplies
Darlington Arrays	High current gain ( ) through cascaded transistor pairs	High-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

Dielectric Isolation: Silicon dioxide layers separate individual transistors
Integrated Resistors: Laser-trimmed thin-film resistors set bias points
Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

Parameter	Description	Importance
hFE (Current Gain)	Ratio of collector to base current	Determines amplification capability
VCEO (Max Voltage)	Max voltage between collector and emitter	Limits operating voltage range
Ic (Max Current)	Maximum collector current rating	Defines power handling capability
fT (Transition Frequency)	Frequency at which gain drops to unity	Indicates high-frequency performance
VCE(sat)	Collector-emitter saturation voltage	Affects power efficiency

5. Application Areas

Main industries and typical equipment:

Consumer Electronics: Mobile phones, LED displays, home appliances
Industrial Control: PLCs, motor drivers, sensor interfaces
Automotive: ECU systems, LED lighting drivers, infotainment systems
Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
ON Semiconductor	MBT3946DW1T5G	100mA Ic, 40V VCEO, 100MHz fT
Nexperia	PMBT2369EAR	Dual NPN array, 300mA total current
STMicroelectronics	SMUN2232T	PNP+Schottky diode array, 100mA
Infineon	IPAR10L3M06	Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

Match VCEO/Ic ratings with circuit requirements
Select appropriate hFE for desired gain
Consider thermal resistance for power applications
Evaluate package size vs. current density
Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

Higher integration levels (e.g., 8-transistor arrays in TSSOP)
Wide bandgap materials (SiC/GaN BJT hybrids)
Micron-scale packaging (0.4mm pitch QFN)
Smart power arrays with integrated protection circuits
Reduced parasitic capacitance for >5GHz RF applications