Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Part Number	Description / PDF	Quantity
DMA564050R Panasonic	TRANS PREBIAS DUAL PNP SMINI6	9510
RN2705,LF Toshiba Electronic Devices and Storage Corporation	PNPX2 BRT Q1BSR2.2KOHM Q1BER47KO	9000
RN1906,LF(CT Toshiba Electronic Devices and Storage Corporation	TRANS 2NPN PREBIAS 0.2W US6	0
NSVBC114YPDXV6T1G Sanyo Semiconductor/ON Semiconductor	TRANS PREBIAS NPN/PNP 50V SOT563	400056000
EMF21T2R ROHM Semiconductor	TRANS NPN PREBIAS/PNP 0.15W EMT6	0
DDA144EU-7-F Zetex Semiconductors (Diodes Inc.)	TRANS 2PNP PREBIAS 0.2W SOT363	5154
RN2712JE(TE85L,F) Toshiba Electronic Devices and Storage Corporation	TRANS 2PNP PREBIAS 0.1W ESV	4000
RN1605TE85LF Toshiba Electronic Devices and Storage Corporation	TRANS 2NPN PREBIAS 0.3W SM6	3592
RN2601(TE85L,F) Toshiba Electronic Devices and Storage Corporation	TRANS 2PNP PREBIAS 0.3W SM6	5065
DMA261000R Panasonic	TRANS PREBIAS DUAL PNP MINI5	2406
UP0339700L Panasonic	TRANS PREBIAS NPN/PNP SSMINI5	7880
PUMH11,115 Nexperia	TRANS PREBIAS 2NPN 50V 6TSSOP	5855
UMD25NTR ROHM Semiconductor	UMD25N IS A DIGITAL TRANSISTOR C	11960
NSVB143TPDXV6T1G	SMALL SIGNAL BIPOLAR TRANSISTOR	20000
RN1710JE(TE85L,F) Toshiba Electronic Devices and Storage Corporation	NPN X 2 BRT, Q1BSR=4.7KΩ, Q1BER=	3968
XN0411100L Panasonic	TRANS PREBIAS DUAL PNP MINI6	166
EMH10T2R ROHM Semiconductor	TRANS 2NPN PREBIAS 0.15W EMT6	4037
NSBC143EPDXV6T1	SMALL SIGNAL BIPOLAR TRANSISTOR	631985
MUN5335DW1T2G Sanyo Semiconductor/ON Semiconductor	TRANS NPN/PNP PREBIAS 0.25W SC88	2147483647
UMG7NTR ROHM Semiconductor	TRANS 2NPN PREBIAS 0.15W UMT5	0

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
NPN Arrays	Common-emitter configuration with integrated base resistors for switching	Digital logic circuits, relay drivers
PNP Arrays	Negative voltage switching with matched resistor ratios	Motor control, battery management
Complementary Pairs	Matched NPN/PNP transistors for push-pull amplifiers	Audio amplifiers, power supplies
Darlington Arrays	High current gain ( ) through cascaded transistor pairs	High-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

Dielectric Isolation: Silicon dioxide layers separate individual transistors
Integrated Resistors: Laser-trimmed thin-film resistors set bias points
Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

Parameter	Description	Importance
hFE (Current Gain)	Ratio of collector to base current	Determines amplification capability
VCEO (Max Voltage)	Max voltage between collector and emitter	Limits operating voltage range
Ic (Max Current)	Maximum collector current rating	Defines power handling capability
fT (Transition Frequency)	Frequency at which gain drops to unity	Indicates high-frequency performance
VCE(sat)	Collector-emitter saturation voltage	Affects power efficiency

5. Application Areas

Main industries and typical equipment:

Consumer Electronics: Mobile phones, LED displays, home appliances
Industrial Control: PLCs, motor drivers, sensor interfaces
Automotive: ECU systems, LED lighting drivers, infotainment systems
Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
ON Semiconductor	MBT3946DW1T5G	100mA Ic, 40V VCEO, 100MHz fT
Nexperia	PMBT2369EAR	Dual NPN array, 300mA total current
STMicroelectronics	SMUN2232T	PNP+Schottky diode array, 100mA
Infineon	IPAR10L3M06	Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

Match VCEO/Ic ratings with circuit requirements
Select appropriate hFE for desired gain
Consider thermal resistance for power applications
Evaluate package size vs. current density
Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

Higher integration levels (e.g., 8-transistor arrays in TSSOP)
Wide bandgap materials (SiC/GaN BJT hybrids)
Micron-scale packaging (0.4mm pitch QFN)
Smart power arrays with integrated protection circuits
Reduced parasitic capacitance for >5GHz RF applications