Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
NSVIMD10AMT1G

NSVIMD10AMT1G

Sanyo Semiconductor/ON Semiconductor

SURF MT BIASED RES XSTR

3389

FMG5AT148

FMG5AT148

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.3W SMT5

0

IMB3AT110

IMB3AT110

ROHM Semiconductor

TRANS PREBIAS DUAL PNP SMT6

2985

UMA10NTR

UMA10NTR

ROHM Semiconductor

TRANS PREBIAS DUAL PNP UMT5

0

EMH2FHAT2R

EMH2FHAT2R

ROHM Semiconductor

NPN+NPN DIGITAL TRANSISTOR (CORR

8000

DMG264050R

DMG264050R

Panasonic

TRANS NPN/PNP PREBIAS 0.3W MINI6

1882

DCX143TU-7-F

DCX143TU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN/PNP SOT363

2579

RN2907,LF(CT

RN2907,LF(CT

Toshiba Electronic Devices and Storage Corporation

PNPX2 BRT Q1BSR10KOHM Q1BER47KOH

4980

PEMH2,315

PEMH2,315

Nexperia

PEMH2 - UPN/NPN DOUBLE RESISTOR-

16000

DMG963010R

DMG963010R

Panasonic

TRANS PREBIAS NPN/PNP SSMINI5

8000

NSVBC144EPDXV6T1G

NSVBC144EPDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT563

184000

UMC2NTR

UMC2NTR

ROHM Semiconductor

TRANS NPN/PNP PREBIAS 0.15W UMT5

2944

MUN5330DW1T1G

MUN5330DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 1NPN 1PNP 50V SC88

458033000

PBLS4001D,115

PBLS4001D,115

Nexperia

SMALL SIGNAL BIPOLAR TRANSISTOR,

68102

DMC562050R

DMC562050R

Panasonic

TRANS 2NPN PREBIAS 0.15W SMINI5

2970

NHUMH2X

NHUMH2X

Nexperia

NHUMH2/SOT363/SC-88

3000

PEMD18,115

PEMD18,115

Nexperia

TRANS PREBIAS NPN/PNP 50V SOT666

0

SMUN5211DW1T1G

SMUN5211DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SC88

2147483647

NSBA143EDXV6T1

NSBA143EDXV6T1

SMALL SIGNAL BIPOLAR TRANSISTOR

44000

UMC3NTR

UMC3NTR

ROHM Semiconductor

TRANS NPN/PNP PREBIAS 0.15W UMT5

0

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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