Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DMA261030R

DMA261030R

Panasonic

TRANS PREBIAS DUAL PNP MINI5

1995

PQMD2Z

PQMD2Z

Nexperia

TRANS PREBIAS NPN/PNP 50V 6DFN

0

NSBC123EPDXV6T1

NSBC123EPDXV6T1

SMALL SIGNAL BIPOLAR TRANSISTOR

96000

DDA144EU-7

DDA144EU-7

Zetex Semiconductors (Diodes Inc.)

TRANS 2PNP PREBIAS 0.2W SOT363

2540

PEMD2,115

PEMD2,115

Nexperia

TRANS PREBIAS NPN/PNP SOT666

2214

NSVBC114YPDXV65G

NSVBC114YPDXV65G

TRANS PREBIAS NPN/PNP SOT563

48000

IMH20TR1G

IMH20TR1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 15V SC74R

27000

PBLS4001Y,115

PBLS4001Y,115

Nexperia

TRANS PREBIAS 1NPN 1PNP 6TSSOP

4333

RN1961(TE85L,F)

RN1961(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

TRANS 2NPN PREBIAS 0.2W US6

2545

PUMH14,115

PUMH14,115

Nexperia

NOW NEXPERIA PUMH14 - SMALL SIGN

91687

FMG8AT148

FMG8AT148

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.3W SMT5

2316

RN2708JE(TE85L,F)

RN2708JE(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

TRANS 2PNP PREBIAS 0.1W ESV

2990

PEMB10,115

PEMB10,115

Nexperia

TRANS 2PNP PREBIAS 0.3W SOT666

0

NHUMD12F

NHUMD12F

Nexperia

NHUMD12/SOT363/SC-88

9875

RN4990(T5L,F,T)

RN4990(T5L,F,T)

Toshiba Electronic Devices and Storage Corporation

TRANS NPN/PNP PREBIAS 0.2W US6

3000

DMG9640N0R

DMG9640N0R

Panasonic

TRANS PREBIAS NPN/PNP SSMINI6

11441

DMC566000R

DMC566000R

Panasonic

TRANS PREBIAS DUAL NPN SMINI6

3000

NSVMUN5211DW1T2G

NSVMUN5211DW1T2G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SC88

297

DDC124EH-7

DDC124EH-7

Zetex Semiconductors (Diodes Inc.)

TRANS 2NPN PREBIAS 0.15W SOT563

0

IMH1AT110

IMH1AT110

ROHM Semiconductor

TRANS PREBIAS DUAL NPN SMT6

5655

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
RFQ BOM Call Skype Email
Top