Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
UMH10NTN

UMH10NTN

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W UMT6

2549

UMH3NTN

UMH3NTN

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W UMT6

4621

PUMH17F

PUMH17F

Nexperia

PUMH17/SOT363/SC-88

0

DMA264040R

DMA264040R

Panasonic

TRANS PREBIAS DUAL PNP MINI6

1209

DMC264010R

DMC264010R

Panasonic

TRANS PREBIAS DUAL NPN MINI6

232

RN2906FE,LF(CT

RN2906FE,LF(CT

Toshiba Electronic Devices and Storage Corporation

PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO

8000

RN2608(TE85L,F)

RN2608(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

TRANS 2PNP PREBIAS 0.3W SM6

3000

MUN5212DW1T1G

MUN5212DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2NPN PREBIAS 0.25W SOT363

345339000

DCX114TK-7-F

DCX114TK-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN/PNP PREBIAS 0.3W SC74R

0

RN4990(TE85L,F)

RN4990(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

NPN + PNP BRT, Q1BSR=4.7KΩ, Q1BE

2990

SMUN5335DW1T2G

SMUN5335DW1T2G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN/PNP PREBIAS SOT363

5945

UMH10NFHATN

UMH10NFHATN

ROHM Semiconductor

NPN+NPN DIGITAL TRANSISTOR (CORR

1350

NSBC114YPDXV6T5G

NSBC114YPDXV6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT563

104000

MUN5311DW1T1G

MUN5311DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 1NPN 1PNP 50V SC88

0

PUMB30,115

PUMB30,115

Nexperia

TRANS PREBIAS 2PNP 50V 6TSSOP

0

NSVMUN5333DW1T1G

NSVMUN5333DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 1NPN 1PNP 50V SC88

3463

NSVBC143ZPDXV6T1G

NSVBC143ZPDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT563

2340

DCX114YU-7-F

DCX114YU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN/PNP PREBIAS SOT363

361

MUN5237DW1T1

MUN5237DW1T1

TRANS 2NPN PREBIAS 0.25W SOT363

44980

IMH11AT110

IMH11AT110

ROHM Semiconductor

TRANS PREBIAS DUAL NPN SMT6

1580

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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