Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Part Number	Description / PDF	Quantity
PEMD2,315 Nexperia	NOW NEXPERIA PEMD2 - SMALL SIGNA	78500
MIMD10A-7-F Zetex Semiconductors (Diodes Inc.)	TRANS PREBIAS NPN/PNP SOT363	0
ADC114EUQ-13 Zetex Semiconductors (Diodes Inc.)	PREBIAS TRANSISTOR SOT363 T&R 10	0
PUMH17,115 Nexperia	TRANS PREBIAS 2NPN 50V 6TSSOP	17989
RN1704,LF Toshiba Electronic Devices and Storage Corporation	NPNX2 BRT Q1BSR47KOHM Q1BER47KOH	5900
RN4903,LF(CT Toshiba Electronic Devices and Storage Corporation	PNP + NPN BRT Q1BSR22KOHM Q1BER2	6000
DMC264000R Panasonic	TRANS PREBIAS DUAL NPN MINI6	203
XP0121400L Panasonic	TRANS 2NPN PREBIAS 0.15W SMINI5	0
UMB8NTR ROHM Semiconductor	TRANS PREBIAS DUAL PNP UMT6	0
EMG11T2R ROHM Semiconductor	TRANS 2NPN PREBIAS 0.15W EMT5	11082
DMA561010R Panasonic	TRANS PREBIAS DUAL PNP SMINI5	2948
PUMH7F Nexperia	PUMH7/SOT363/SC-88	0
DDC144EH-7 Zetex Semiconductors (Diodes Inc.)	TRANS 2NPN PREBIAS 0.15W SOT563	54000
UMD9NTR ROHM Semiconductor	TRANS NPN/PNP PREBIAS 0.15W UMT6	4552
DMG963H50R Panasonic	TRANS PREBIAS NPN/PNP SSMINI5	7405
RN1908(T5L,F,T) Toshiba Electronic Devices and Storage Corporation	TRANS 2NPN PREBIAS 0.2W US6	2986
NSBC123JPDXV6T5	SMALL SIGNAL BIPOLAR TRANSISTOR	7955
MUN5136DW1T1G Sanyo Semiconductor/ON Semiconductor	TRANS 2PNP PREBIAS 0.25W SC88	63000
RN1607(TE85L,F) Toshiba Electronic Devices and Storage Corporation	TRANS 2NPN PREBIAS 0.3W SM6	4804
NSBC143ZPDP6T5G Sanyo Semiconductor/ON Semiconductor	TRANS 2NPN PREBIAS 0.339W SOT963	0

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
NPN Arrays	Common-emitter configuration with integrated base resistors for switching	Digital logic circuits, relay drivers
PNP Arrays	Negative voltage switching with matched resistor ratios	Motor control, battery management
Complementary Pairs	Matched NPN/PNP transistors for push-pull amplifiers	Audio amplifiers, power supplies
Darlington Arrays	High current gain ( ) through cascaded transistor pairs	High-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

Dielectric Isolation: Silicon dioxide layers separate individual transistors
Integrated Resistors: Laser-trimmed thin-film resistors set bias points
Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

Parameter	Description	Importance
hFE (Current Gain)	Ratio of collector to base current	Determines amplification capability
VCEO (Max Voltage)	Max voltage between collector and emitter	Limits operating voltage range
Ic (Max Current)	Maximum collector current rating	Defines power handling capability
fT (Transition Frequency)	Frequency at which gain drops to unity	Indicates high-frequency performance
VCE(sat)	Collector-emitter saturation voltage	Affects power efficiency

5. Application Areas

Main industries and typical equipment:

Consumer Electronics: Mobile phones, LED displays, home appliances
Industrial Control: PLCs, motor drivers, sensor interfaces
Automotive: ECU systems, LED lighting drivers, infotainment systems
Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
ON Semiconductor	MBT3946DW1T5G	100mA Ic, 40V VCEO, 100MHz fT
Nexperia	PMBT2369EAR	Dual NPN array, 300mA total current
STMicroelectronics	SMUN2232T	PNP+Schottky diode array, 100mA
Infineon	IPAR10L3M06	Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

Match VCEO/Ic ratings with circuit requirements
Select appropriate hFE for desired gain
Consider thermal resistance for power applications
Evaluate package size vs. current density
Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

Higher integration levels (e.g., 8-transistor arrays in TSSOP)
Wide bandgap materials (SiC/GaN BJT hybrids)
Micron-scale packaging (0.4mm pitch QFN)
Smart power arrays with integrated protection circuits
Reduced parasitic capacitance for >5GHz RF applications