Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
UMG11NTR

UMG11NTR

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W UMT5

2880

UMF28NTR

UMF28NTR

ROHM Semiconductor

TRANS NPN PREBIAS/PNP 0.15W UMT6

2437

NSVMUN5212DW1T1G

NSVMUN5212DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2NPN PREBIAS 0.25W SOT363

26698

IMB5AT108

IMB5AT108

ROHM Semiconductor

TRANS PREBIAS 2PNP 50V SC74

0

SMUN5232DW1T1G

SMUN5232DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2NPN PREBIAS 0.187W SOT363

0

PEMB17,115

PEMB17,115

Nexperia

NOW NEXPERIA PEMB17 - SMALL SIGN

176000

RN1602(TE85L,F)

RN1602(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

TRANS 2NPN PREBIAS 0.3W SM6

2879

PRMH10Z

PRMH10Z

Nexperia

TRANS PREBIAS 2NPN 50V DFN1412-6

4927

PUMB18,115

PUMB18,115

Nexperia

NOW NEXPERIA PUMB18 - SMALL SIGN

6000

NP0G3D200A

NP0G3D200A

Panasonic

TRANS PREBIAS NPN/PNP SSSMINI6

7620

RN1508(TE85L,F)

RN1508(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

TRANS 2NPN PREBIAS 0.3W SMV

710

PBLS1501V,115

PBLS1501V,115

Nexperia

TRANS PREBIAS 1NPN 1PNP SOT666

11926

FMA3AT148

FMA3AT148

ROHM Semiconductor

TRANS PREBIAS DUAL PNP SMT5

2987

RN4985,LF(CT

RN4985,LF(CT

Toshiba Electronic Devices and Storage Corporation

TRANS NPN/PNP PREBIAS 0.2W US6

250

UMH25NFHATN

UMH25NFHATN

ROHM Semiconductor

AUTOMOTIVE DUAL DIGITAL TRANSIST

3000

DMC561050R

DMC561050R

Panasonic

TRANS 2NPN PREBIAS 0.15W SMINI5

5999

DMC961030R

DMC961030R

Panasonic

TRANS PREBIAS DUAL NPN SSMINI5

16000

BCR183SH6327XTSA1

BCR183SH6327XTSA1

IR (Infineon Technologies)

TRANS PREBIAS 2PNP 50V SOT363-6

0

SMUN5211T1

SMUN5211T1

TRANS PREBIAS NPN 202MW SC70-3

42000

EMD22FHAT2R

EMD22FHAT2R

ROHM Semiconductor

PNP+NPN DIGITAL TRANSISTOR (CORR

7770

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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