NSVMUN5212DW1T1G

Manufacturer Part NSVMUN5212DW1T1G
Manufacturer Sanyo Semiconductor/ON Semiconductor
Description TRANS 2NPN PREBIAS 0.25W SOT363
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet NSVMUN5212DW1T1G PDF
Availability 26698 pieces
Shipped from HK warehouse
Expected Shipping Dec 08 - Dec 12 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):22kOhms
Resistor - Emitter Base (R2):22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:250mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
More Information
NSVMUN5212DW1T1G
NSVMUN5212DW1T1G
Sanyo Semiconductor/ON Semiconductor NSVMUN5212DW1T1G is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
NSVMUN5212DW1T1G PDF
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