Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
NSBC114YPDXV6T1G

NSBC114YPDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT563

2735

RN1901,LF(CT

RN1901,LF(CT

Toshiba Electronic Devices and Storage Corporation

TRANS 2NPN PREBIAS 0.2W US6

0

MUN5232DW1T1G

MUN5232DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2NPN PREBIAS 0.25W SOT363

680

PUMD4,115

PUMD4,115

Nexperia

TRANS PREBIAS NPN/PNP 50V 6TSSOP

2718

PEMH15,115

PEMH15,115

Nexperia

TRANS 2NPN PREBIAS 0.3W SOT666

24297

MUN5116DW1T1G

MUN5116DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2PNP 50V SC88

735075000

IMD1AT108

IMD1AT108

ROHM Semiconductor

TRANS NPN/PNP PREBIAS 0.3W SMT6

0

DDC122TH-7

DDC122TH-7

Zetex Semiconductors (Diodes Inc.)

TRANS 2NPN PREBIAS 0.15W SOT563

0

NSBA123JDXV6T5

NSBA123JDXV6T5

SMALL SIGNAL BIPOLAR TRANSISTOR

943798

DMA264020R

DMA264020R

Panasonic

TRANS PREBIAS DUAL PNP MINI6

3418

BCR185SH6327

BCR185SH6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

5980

SMUN5213DW1T1G

SMUN5213DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SC88

2147483647

PUMB9,115

PUMB9,115

Nexperia

TRANS PREBIAS 2PNP 50V 6TSSOP

1635

PUMD48,165

PUMD48,165

Nexperia

TRANS PREBIAS NPN/PNP 6TSSOP

10115

RN4609(TE85L,F)

RN4609(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

TRANS NPN/PNP PREBIAS 0.3W SM6

1333

PUMD15,115

PUMD15,115

Nexperia

TRANS PREBIAS NPN/PNP 6TSSOP

5859

RN1911,LF(CT

RN1911,LF(CT

Toshiba Electronic Devices and Storage Corporation

NPNX2 BRT Q1BSR10KOHM Q1BERINF.K

6000

NSBC144WDXV6T1G

NSBC144WDXV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS 2NPN 50V SOT563

0

DDA144EK-7-F

DDA144EK-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS DUAL PNP SOT26

0

RN4901,LF(CT

RN4901,LF(CT

Toshiba Electronic Devices and Storage Corporation

TRANS NPN/PNP PREBIAS 0.2W US6

0

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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