Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
PUMD2,165

PUMD2,165

Nexperia

TRANS PREBIAS NPN/PNP 6TSSOP

0

BCR183UE6327HTSA1

BCR183UE6327HTSA1

IR (Infineon Technologies)

TRANS 2PNP PREBIAS 0.25W SC74

0

NSBC144EPDXV6T5G

NSBC144EPDXV6T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT563

0

EMB61T2R

EMB61T2R

ROHM Semiconductor

TRANS 2PNP PREBIAS 0.15W EMT6

7080

NSBC144EDXV6T5

NSBC144EDXV6T5

SMALL SIGNAL BIPOLAR TRANSISTOR

7995

PUMH9,125

PUMH9,125

Nexperia

PUMH9 - NPN/NPN RESISTOR-EQUIPPE

3462000

PBLS6024D,115

PBLS6024D,115

Nexperia

NOW NEXPERIA PBLS6024D - SMALL S

3000

PUMD2,125

PUMD2,125

Nexperia

TRANS PREBIAS NPN/PNP 6TSSOP

0

NSBC114EDXV6T5

NSBC114EDXV6T5

SMALL SIGNAL BIPOLAR TRANSISTOR

896000

PBLS6003D,115

PBLS6003D,115

Nexperia

TRANS PREBIAS 1NPN 1PNP 6TSOP

480

BCR119SH6327XTSA1

BCR119SH6327XTSA1

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

21000

PEMH14,115

PEMH14,115

Nexperia

NOW NEXPERIA PEMH14- SMALL SIGNA

1220000

UMD3NFHATR

UMD3NFHATR

ROHM Semiconductor

PNP+NPN DIGITAL TRANSISTOR (WITH

5

PUMD3,115

PUMD3,115

Nexperia

TRANS PREBIAS NPN/PNP 6TSSOP

42368

NSVMUN5336DW1T1G

NSVMUN5336DW1T1G

Sanyo Semiconductor/ON Semiconductor

COMPLEMENTARY DIGITAL TRA

105000

RN4991(T5L,F,T)

RN4991(T5L,F,T)

Toshiba Electronic Devices and Storage Corporation

TRANS NPN/PNP PREBIAS 0.2W US6

3000

RN4984(T5L,F,T)

RN4984(T5L,F,T)

Toshiba Electronic Devices and Storage Corporation

TRANS NPN/PNP PREBIAS 0.2W US6

2160

DMG563020R

DMG563020R

Panasonic

TRANS PREBIAS NPN/PNP SMINI5

5959

FMG6AT148

FMG6AT148

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.3W SMT5

0

PEMH7,115

PEMH7,115

Nexperia

NOW NEXPERIA PEMH7 - SMALL SIGNA

159535

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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