RN1968(TE85L,F) Toshiba Electronic Devices and Storage Corporation RN1968(TE85L,F) inventory, pricing, datasheet

Manufacturer Part	RN1968(TE85L,F)
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Description	TRANS 2NPN PREBIAS 0.2W US6
Category	Discrete Semiconductor \| Diodes, Transistor, electronic component–Ample Chip
RoHS	Lead free / RoHS Compliant
Warranty	365 days
Datasheet	RN1968(TE85L,F) PDF
Availability	3000 pieces
Shipped from	HK warehouse
Expected Shipping	Dec 08 - Dec 12 2025

Product Attributes

Type	Description
Series:	-
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
Transistor Type:	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	22kOhms
Resistor - Emitter Base (R2):	47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	100nA (ICBO)
Frequency - Transition:	250MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	US6

More Information

RN1968(TE85L,F)

Toshiba Electronic Devices and Storage Corporation RN1968(TE85L,F) is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.