PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
SN75372PSRE4

SN75372PSRE4

Texas Instruments

IC GATE DRVR LOW-SIDE 8SO

0

UCD7232RTJT

UCD7232RTJT

Texas Instruments

IC GATE DRVR HALF-BRIDGE 20QFN

494

LM5101BSDX/NOPB

LM5101BSDX/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

4500

UCC27211DPRR

UCC27211DPRR

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

0

UCC27525DSDT

UCC27525DSDT

Texas Instruments

IC GATE DRVR LOW-SIDE 8SON

638

UCC37324DG4

UCC37324DG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

0

LM9061QDRQ1

LM9061QDRQ1

Texas Instruments

IC GATE DRVR HIGH-SIDE 8SOIC

5000

UCC37322DGNG4

UCC37322DGNG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

0

UCC27325DR

UCC27325DR

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

4242

UCC27323PE4

UCC27323PE4

Texas Instruments

BUFFER/INVERTER BASED MOSFET DRI

285

LM5101AMR/NOPB

LM5101AMR/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOPWR

0

LM5101M/NOPB

LM5101M/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

5939975

UCC27424QDRQ1

UCC27424QDRQ1

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

2094

TPS2818MDBVREP

TPS2818MDBVREP

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-5

3264

TPIC46L03DBR

TPIC46L03DBR

Texas Instruments

BUFFER/INVERTER MOSFET DRIVER

52000

UCC27423DGN

UCC27423DGN

Texas Instruments

UCC27423 DUAL 4-A MOSFET DRIVER

26733

UCC37325DGNR

UCC37325DGNR

Texas Instruments

UCC37325 DUAL 4 A PEAK HIGH SPEE

0

LM5114ASDX/NOPB

LM5114ASDX/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE 6WSON

0

TPS2816DBVR

TPS2816DBVR

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-5

2356

UC3709DW

UC3709DW

Texas Instruments

IC GATE DRVR LOW-SIDE 16SOIC

23

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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