PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
UCC27211D

UCC27211D

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

1589975

TPS2811D

TPS2811D

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

200

LM5100AM/NOPB

LM5100AM/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

225

TPS2829DBVR

TPS2829DBVR

Texas Instruments

TPS2829 NON-INVERTING HIGH-SPEED

3177

LM5101BMA/NOPB

LM5101BMA/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

1494

LM5102MMX/NOPB

LM5102MMX/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10VSSOP

0

UC3706J

UC3706J

Texas Instruments

PUSH-PULL BASED MOSFET DRIVER

111

LM5108DRCR

LM5108DRCR

Texas Instruments

IC GATE DRVR PWR MGMT

35079000

TPS51604QDSGTQ1

TPS51604QDSGTQ1

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8WSON

240

UCC27210DR

UCC27210DR

Texas Instruments

UCC27210 120V BOOT, 4A PEAK, HIG

2945

LM25101CMYE/NOPB

LM25101CMYE/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8MSOP

115

TPS2812D

TPS2812D

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

0

UCC27200ADDAR

UCC27200ADDAR

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOPWR

0

UCC37322DGNRG4

UCC37322DGNRG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

0

UC2714DTR

UC2714DTR

Texas Instruments

UC2714 COMPLEMENTARY SWITCH FET

44774

LM5100BMAX/NOPB

LM5100BMAX/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

2490

UCC27323DG4

UCC27323DG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

0

LM25101ASD-1/NOPB

LM25101ASD-1/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8WSON

1249

LM5112SDX/NOPB

LM5112SDX/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE 6WSON

10905

TPS28226DRBR

TPS28226DRBR

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SON

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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