PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
LM5104M/NOPB

LM5104M/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

3707

UCC37323DGNR

UCC37323DGNR

Texas Instruments

UCC37323 DUAL 4 A PEAK HIGH SPEE

2500

UCC27511AQDBVRQ1

UCC27511AQDBVRQ1

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-6

9255

UCC27223PWP

UCC27223PWP

Texas Instruments

UCC27223 HIGH-EFFICIENCY PREDICT

25651

DRV8300DPWR

DRV8300DPWR

Texas Instruments

100-V MAX SIMPLE 3-PHASE GATE DR

0

UCC37322DGNR

UCC37322DGNR

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

0

UCC27517AQDBVRQ1

UCC27517AQDBVRQ1

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-5

0

LM5101AMX/NOPB

LM5101AMX/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

0

UCC27424DGNRG4

UCC27424DGNRG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

0

UC2708N

UC2708N

Texas Instruments

IC GATE DRVR LOW-SIDE 8DIP

0

UCC27324DGN

UCC27324DGN

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

339

TPS2814DR

TPS2814DR

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

3105

UCC27524DSDR

UCC27524DSDR

Texas Instruments

IC GATE DRVR LOW-SIDE 8SON

125

LM5106SD/NOPB

LM5106SD/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

41051

UCC27519DBVT

UCC27519DBVT

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-5

843

UCC27324QDRQ1

UCC27324QDRQ1

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

3702

UCC27210DPRT

UCC27210DPRT

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

500

UC3706DW

UC3706DW

Texas Instruments

IC GATE DRVR LOW-SIDE 16SOIC

356

UCC27211AQDDARQ1

UCC27211AQDDARQ1

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOPWR

2208

UC2705D

UC2705D

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

678

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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