PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
UCC27201ADDAR

UCC27201ADDAR

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOPWR

2952

SN75374DR

SN75374DR

Texas Instruments

IC GATE DRVR LOW-SIDE 16SOIC

0

UCC27323DGN

UCC27323DGN

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

333

LM5101BSD/NOPB

LM5101BSD/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

0

UC3705D

UC3705D

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

11

UC2706N

UC2706N

Texas Instruments

UC2706 HIGH SPEED MOSFET DRIVERS

20294

UCC27201AD

UCC27201AD

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

372

LM5114BMF/S7003094

LM5114BMF/S7003094

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-6

1091

TPS2819DBVRG4

TPS2819DBVRG4

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-5

0

LM5110-1MX/NOPB

LM5110-1MX/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

1009

TPS2811PWLE

TPS2811PWLE

Texas Instruments

NAND GATE BASED MOSFET DRIVER

5183

LM5101AMRX/NOPB

LM5101AMRX/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOPWR

0

TPS2814DRG4

TPS2814DRG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

0

UCC27537DBVT

UCC27537DBVT

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-5

971

LM5100AMX/NOPB

LM5100AMX/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

4656

LM25101BSDX/NOPB

LM25101BSDX/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

0

LM5112Q1SD/NOPB

LM5112Q1SD/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE 6WSON

1108

LM5100CMA/NOPB

LM5100CMA/NOPB

Texas Instruments

HALF BRIDGE BASED MOSFET DRIVER

0

LM5111-3MY/NOPB

LM5111-3MY/NOPB

Texas Instruments

BUFFER/INVERTER MOSFET DRIVER

0

UCD7138DRSR

UCD7138DRSR

Texas Instruments

IC GATE DRVR LOW-SIDE 6SON

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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