PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
UCC37325DR

UCC37325DR

Texas Instruments

UCC37325 DUAL 4 A PEAK HIGH SPEE

15000

UCC24624DT

UCC24624DT

Texas Instruments

IC GATE DRVR ISOLATED

1303

UCC21530DWK

UCC21530DWK

Texas Instruments

IC GATE DRVR ISOLATED

320

UC3710NG4

UC3710NG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8DIP

0

LM25101AM/NOPB

LM25101AM/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

35

LM5109ASDX/NOPB

LM5109ASDX/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8WSON

0

UC3708DWG4

UC3708DWG4

Texas Instruments

IC GATE DRVR LOW-SIDE 16SOIC

0

UCC27200DDAR

UCC27200DDAR

Texas Instruments

UCC27200 120V BOOT, 3-A PEAK, HI

2250

UCC27714D

UCC27714D

Texas Instruments

IC GATE DRVR HALF-BRIDGE 14SOIC

119

EMB1412MY/NOPB

EMB1412MY/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

762

UCC27518AQDBVRQ1

UCC27518AQDBVRQ1

Texas Instruments

UCC27518A-Q1 AUTOMOTIVE CATALOG

131090

UCC27324DR

UCC27324DR

Texas Instruments

UCC27324 DUAL 4 A PEAK HIGH SPEE

0

UCC27211DRMR

UCC27211DRMR

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8VSON

0

TPS28225D

TPS28225D

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

601

UCC27200DDAG4

UCC27200DDAG4

Texas Instruments

HALF BRIDGE BASED PERIPHERAL DRI

75

LM5109BQNGTRQ1

LM5109BQNGTRQ1

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8WSON

0

LM5111-3M/NOPB

LM5111-3M/NOPB

Texas Instruments

BUFFER/INVERTER PERIPHL DRIVER

0

UCC27525DGNR

UCC27525DGNR

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

4939

UCC27526DSDT

UCC27526DSDT

Texas Instruments

IC GATE DRVR LOW-SIDE 8SON

750

UCC27527DSDT

UCC27527DSDT

Texas Instruments

IC GATE DRVR LOW-SIDE 8SON

436

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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