PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
UCC27210DRMR

UCC27210DRMR

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8VSON

0

SM72482MA-4/NOPB

SM72482MA-4/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

385

UCC27425QDRQ1

UCC27425QDRQ1

Texas Instruments

UCC27425-Q1 AUTOMOTIVE DUAL 4A H

22262

LM5114BMFX/NOPB

LM5114BMFX/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-6

0

TPS2834DR

TPS2834DR

Texas Instruments

IC GATE DRVR HALF-BRIDGE 14SOIC

0

UCC27423D

UCC27423D

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

300

LM25101ASDX-1/NOPB

LM25101ASDX-1/NOPB

Texas Instruments

3A, 2A AND 1A HIGH VOLTAGE, HIGH

4500

LM5113QDPRRQ1

LM5113QDPRRQ1

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

4187

UCC27200ADRCR

UCC27200ADRCR

Texas Instruments

UCC27200A 120-V BOOT, 3-A PEAK,

6000

UCC27201ADR

UCC27201ADR

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

1668

UC3710TG3

UC3710TG3

Texas Instruments

IC GATE DRVR LOW-SIDE TO220-5

571

UC2707DW

UC2707DW

Texas Instruments

IC GATE DRVR LOW-SIDE 16SOIC

7

UCC27282D

UCC27282D

Texas Instruments

120V LOW COST HS/LS DRIVER- D PK

1490

LM5100CMAX/NOPB

LM5100CMAX/NOPB

Texas Instruments

LM5100C 1A HIGH VOLTAGE HIGH-SID

0

UCC27322P

UCC27322P

Texas Instruments

IC GATE DRVR LOW-SIDE 8DIP

392

UCC27536DBVT

UCC27536DBVT

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-5

891

UCC27223PWPR

UCC27223PWPR

Texas Instruments

UCC27223 HIGH-EFFICIENCY PREDICT

0

LM5104MX/NOPB

LM5104MX/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

11054

TPS2814DG4

TPS2814DG4

Texas Instruments

TPS2814 ONE INVERTING, ONE NON-I

115

UCC27524ADGN

UCC27524ADGN

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

27

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

RFQ BOM Call Skype Email
Top