PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
UC2709N

UC2709N

Texas Instruments

IC GATE DRVR LOW-SIDE 8DIP

0

UCC21222QDQ1

UCC21222QDQ1

Texas Instruments

IC GATE DRVR HALF-BRIDGE 16SOIC

22

UCC27322TDGKREP

UCC27322TDGKREP

Texas Instruments

UCC27322-EP ENHANCED PRODUCT SIN

5000

LM5110-3SDX/NOPB

LM5110-3SDX/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE 10WSON

0

UCC27424DR

UCC27424DR

Texas Instruments

UCC27424 DUAL 4A MOSFET DRIVER

240

TPS2837D

TPS2837D

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

215

UCC27424DGN

UCC27424DGN

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

0

LM5113TMX/NOPB

LM5113TMX/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 12USMD

0

TPS51604DSGR

TPS51604DSGR

Texas Instruments

TPS51604 SYNCHRONOUS BUCK FET DR

143975

UC2715DTR

UC2715DTR

Texas Instruments

UC2715 COMPLEMENTARY SWITCH FET

22212

UCC27322D

UCC27322D

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

14349975

TPIC44L01DBRG4

TPIC44L01DBRG4

Texas Instruments

BUFFER/INVERTER MOSFET DRIVER

0

UCC27321P

UCC27321P

Texas Instruments

IC GATE DRVR LOW-SIDE 8DIP

410

UC2707Q

UC2707Q

Texas Instruments

BUFFER/INVERTER MOSFET DRIVER

12057

LM5109MA/NOPB

LM5109MA/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

9975

UCC27323DGNR

UCC27323DGNR

Texas Instruments

UCC27323 DUAL 4 A PEAK HIGH SPEE

100555

UCC37321P

UCC37321P

Texas Instruments

IC GATE DRVR LOW-SIDE 8DIP

22610000

LM5110-1SDX/NOPB

LM5110-1SDX/NOPB

Texas Instruments

LM5110 DUAL 5A COMPOUND GATE DRI

3500

UC1711L/883B

UC1711L/883B

Texas Instruments

BUFFER/INVERTER BASED MOSFET DRI

309

UC3707DW

UC3707DW

Texas Instruments

UC3707 COMPLEMENTARY HIGH SPEED

39691

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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