PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
UCC27712QDQ1

UCC27712QDQ1

Texas Instruments

UCC27712-Q1 AUTOMOTIVE 620-V, 1.

1851

UCD7201PWPG4

UCD7201PWPG4

Texas Instruments

IC GATE DRVR LOW-SIDE 14HTSSOP

540

TPS2813PWLE

TPS2813PWLE

Texas Instruments

NAND GATE BASED MOSFET DRIVER

5994

LM5106MM/NOPB

LM5106MM/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10VSSOP

139

UC2714D

UC2714D

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

205

UC3715D

UC3715D

Texas Instruments

UC3715 COMPLEMENTARY SWITCH FET

6000

LM5100BSD/NOPB

LM5100BSD/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

0

UCC27200QDDARQ1

UCC27200QDDARQ1

Texas Instruments

UCC27200-Q1 AUTOMOTIVE 120V BOOT

12204

UC3705T

UC3705T

Texas Instruments

BUFFER/INVERTER BASED MOSFET DRI

47941

UCC27221PWPR

UCC27221PWPR

Texas Instruments

HALF BRIDGE BASED MOSFET DRIVER

10633

5962-0051401VPA

5962-0051401VPA

Texas Instruments

UC1708-SP NON-INVERTING HIGH SPE

109

UCC27201ADRCR

UCC27201ADRCR

Texas Instruments

IC GATE DRVR HALF-BRIDGE 9VSON

1636

UC3715DTR

UC3715DTR

Texas Instruments

UC3715 COMPLEMENTARY SWITCH FET

2500

UCC37324PG4

UCC37324PG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8DIP

0

LM5107SD/NOPB

LM5107SD/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8WSON

2496

LM5105SD/NOPB

LM5105SD/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

558

UC3715N

UC3715N

Texas Instruments

BUFFER/INVERTER MOSFET DRIVER

32905

UC2708DW

UC2708DW

Texas Instruments

IC GATE DRVR LOW-SIDE 16SOIC

32

UCC27424DGNG4

UCC27424DGNG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

0

LM5100CSD/NOPB

LM5100CSD/NOPB

Texas Instruments

HALF BRIDGE BASED MOSFET DRIVER

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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