PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
TPS28226DR

TPS28226DR

Texas Instruments

TPS28226 8-PIN HIGH FREQUENCY 4-

4767

UCC37321DGN

UCC37321DGN

Texas Instruments

UCC37321 SINGLE 9-A HIGH SPEED L

14401

UCC27528DSDT

UCC27528DSDT

Texas Instruments

UCC27528 DUAL 5-A HIGH-SPEED LOW

16950

UCC27425DRG4

UCC27425DRG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

0

UCC27523DR

UCC27523DR

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

4472

SN75374DRG4

SN75374DRG4

Texas Instruments

IC GATE DRVR LOW-SIDE 16SOIC

0

TPS51601ADRBR

TPS51601ADRBR

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SON

2687

UC3715DG4

UC3715DG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

0

LM5101CMYX/NOPB

LM5101CMYX/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8MSOP

0

UCC27324PG4

UCC27324PG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8DIP

0

UCC27201DDAR

UCC27201DDAR

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOPWR

0

UC2724N

UC2724N

Texas Instruments

BUFFER/INVERTER MOSFET DRIVER

4011

UCC37324DGN

UCC37324DGN

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

25910000

UCC27425PG4

UCC27425PG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8DIP

0

UCC27523DSDR

UCC27523DSDR

Texas Instruments

IC GATE DRVR LOW-SIDE 8SON

0

LM5111-2MYX/NOPB

LM5111-2MYX/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

0

SN75372P

SN75372P

Texas Instruments

IC GATE DRVR LOW-SIDE 8DIP

297

LMG1210RVRR

LMG1210RVRR

Texas Instruments

IC GATE DRVR GAN MOSFET

0

SN75374DRE4

SN75374DRE4

Texas Instruments

IC GATE DRVR LOW-SIDE 16SOIC

0

UCC37322P

UCC37322P

Texas Instruments

IC GATE DRVR LOW-SIDE 8DIP

433

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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