PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
IR1169STRPBF

IR1169STRPBF

IR (Infineon Technologies)

IR1169S - SYNCHRONOUS RECTIFICAT

2500

UCC37323D

UCC37323D

Texas Instruments

UCC37323 DUAL 4 A PEAK HIGH SPEE

5747

NCP302155MNTWG

NCP302155MNTWG

Sanyo Semiconductor/ON Semiconductor

IC GATE DRVR HI/LOW SIDE PQFN31

99000

MAX626CSA+

MAX626CSA+

Maxim Integrated

IC GATE DRVR LOW-SIDE 8SOIC

691300

TD351ID

TD351ID

STMicroelectronics

IC GATE DRVR HIGH-SIDE 8SO

0

UCC27201DRMT

UCC27201DRMT

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8VSON

148

IRS2117STRPBF

IRS2117STRPBF

IR (Infineon Technologies)

IC GATE DRVR HIGH-SIDE 8SOIC

0

ISL2101AAR3Z-T

ISL2101AAR3Z-T

Intersil (Renesas Electronics America)

IC GATE DRVR HALF-BRIDGE 9DFN

0

TC4426COA713

TC4426COA713

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8SOIC

4307

UCC37325DG4

UCC37325DG4

BUFFER/INVERTER BASED MOSFET DRI

0

MIC4425ZWM-TR

MIC4425ZWM-TR

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 16SOIC

0

LTC4444MPMS8E#PBF

LTC4444MPMS8E#PBF

Analog Devices, Inc.

IC GATE DRVR HALF-BRIDGE 8MSOP

131

UCC37325P

UCC37325P

Texas Instruments

UCC37325 DUAL 4 A PEAK HIGH SPEE

9515

FAN3227TMX

FAN3227TMX

Sanyo Semiconductor/ON Semiconductor

IC GATE DRVR LOW-SIDE 8SOIC

506

UC3706DWG4

UC3706DWG4

Texas Instruments

IC GATE DRVR LOW-SIDE 16SOIC

0

MAX627ESA+

MAX627ESA+

Maxim Integrated

IC GATE DRVR LOW-SIDE 8SOIC

131

MCP14A0152T-E/CH

MCP14A0152T-E/CH

Roving Networks / Microchip Technology

IC GATE DRVR HI/LOW SIDE SOT23-6

3363

ISL6612IB

ISL6612IB

Intersil (Renesas Electronics America)

HALF BRIDGE BASED MOSFET DRIVER

3534

TC4469COE713

TC4469COE713

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 16SOIC

2623

NCP81071CMNTXG

NCP81071CMNTXG

Sanyo Semiconductor/ON Semiconductor

IC GATE DRVR LOW-SIDE 8WDFN

17469000

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

RFQ BOM Call Skype Email
Top