PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
UCC27525D

UCC27525D

Texas Instruments

UCC27525 DUAL, 5A, HIGH-SPEED LO

0

ISL89400AR3Z-T

ISL89400AR3Z-T

Intersil (Renesas Electronics America)

IC GATE DRVR HALF-BRIDGE 9DFN

0

MAX4420CSA

MAX4420CSA

Analog Devices, Inc.

MOSFET DRIVER

1000

TPS2815P

TPS2815P

Texas Instruments

TPS2815 TWO INPUT NAND, DUAL HIG

15265

ICL7667CBA+

ICL7667CBA+

Maxim Integrated

IC GATE DRVR HALF-BRIDGE 8SOIC

206200

UCC27282DR

UCC27282DR

Texas Instruments

3-A, 120-V HALF BRIDGE GATE DRIV

1886

ISL6614CRZ

ISL6614CRZ

Intersil (Renesas Electronics America)

IC GATE DRVR HALF-BRIDGE 16QFN

0

LT1336CS#TRPBF

LT1336CS#TRPBF

Analog Devices, Inc.

IC GATE DRVR HALF-BRIDGE 16SOIC

0

MC34152PG

MC34152PG

Sanyo Semiconductor/ON Semiconductor

IC GATE DRVR LOW-SIDE 8DIP

80

MIC44F19YMME

MIC44F19YMME

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8MSOP

268

IR25602SPBF-INF

IR25602SPBF-INF

IR (Infineon Technologies)

IR25602 - HALF-BRIDGE DRIVER

8243

FAN7385MX

FAN7385MX

Sanyo Semiconductor/ON Semiconductor

IC GATE DRVR HIGH-SIDE 14SOP

106

TC4426CPA

TC4426CPA

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8DIP

480

UCC27324DGNRG4

UCC27324DGNRG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

0

EL7457CSZ-T13

EL7457CSZ-T13

Renesas Electronics America

BUFFER/INVERTER BASED MOSFET DRI

297

TC4426ACOA713

TC4426ACOA713

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8SOIC

0

UCC27714DR

UCC27714DR

Texas Instruments

IC GATE DRVR HALF-BRIDGE 14SOIC

8634

MIC4128YMME-TR

MIC4128YMME-TR

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8MSOP

578

UC3708DW

UC3708DW

Texas Instruments

IC GATE DRVR LOW-SIDE 16SOIC

90

HIP4086AABZ

HIP4086AABZ

Intersil (Renesas Electronics America)

IC GATE DRVR HALF-BRIDGE 24SOIC

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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