PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
LTC7000EMSE#TRPBF

LTC7000EMSE#TRPBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 16MSOP

0

LM5100MX/NOPB

LM5100MX/NOPB

Texas Instruments

HALF BRIDGE PERIPHERAL DRIVER

0

IR2102PBF

IR2102PBF

IR (Infineon Technologies)

IR2102 - GATE DRIVER

20800

UC3705N

UC3705N

Texas Instruments

IC GATE DRVR LOW-SIDE 8DIP

184

MCZ33198EFR2

MCZ33198EFR2

Freescale Semiconductor, Inc. (NXP Semiconductors)

BUFFER/INVERTER BASED MOSFET DRI

9650

ISL6208CHRZ-TR5675

ISL6208CHRZ-TR5675

Intersil (Renesas Electronics America)

IC GATE DRVR HALF-BRIDGE 8DFN

0

SID1183K-TL

SID1183K-TL

Power Integrations

IC GATE DRV HI/LO SIDE ESOP-R16B

1477

IR2136PBF

IR2136PBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 28DIP

223

MC33152PG

MC33152PG

Sanyo Semiconductor/ON Semiconductor

IC GATE DRVR LOW-SIDE 8DIP

95011450

IR21531SPBF

IR21531SPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

2874

AUIRS2118STR

AUIRS2118STR

IR (Infineon Technologies)

IC GATE DRVR HIGH-SIDE 8SOIC

0

MAX4427CPA

MAX4427CPA

Analog Devices, Inc.

MOSFET DRIVER

782

ISL89161FRTBZ

ISL89161FRTBZ

Intersil (Renesas Electronics America)

AND GATE BASED MOSFET DRIVER

945

IRS2332SPBF

IRS2332SPBF

IR (Infineon Technologies)

MOSFET DRIVER, PDSO28

2415

UC2708DWTR

UC2708DWTR

Texas Instruments

UC2708 NON-INVERTING HIGH SPEED

1970

DRV8304HRHAR

DRV8304HRHAR

Texas Instruments

IC GATE DRVR HI/LOW SIDE 40VQFN

0

TPIC46L01DBRG4

TPIC46L01DBRG4

Texas Instruments

IC GATE DRVR LOW-SIDE 28SSOP

0

LM5109BMAX/NOPB

LM5109BMAX/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

347

TC4425EMF713

TC4425EMF713

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8DFN

0

RT9629BZQW

RT9629BZQW

Richtek

IC GATE DRVR HALF-BRIDGE 24WQFN

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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