PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
MCP14E11-E/SN

MCP14E11-E/SN

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8SOIC

255

IXDD609SI

IXDD609SI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

1582

TPS2829DBVRG4

TPS2829DBVRG4

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-5

0

ISL6700IRZ

ISL6700IRZ

Intersil (Renesas Electronics America)

HALF BRIDGE BASED MOSFET DRIVER

1244

HIP6601BCB-T

HIP6601BCB-T

Intersil (Renesas Electronics America)

HALF BRIDGE BASED MOSFET DRIVER

2500

FAN3111CSX

FAN3111CSX

Sanyo Semiconductor/ON Semiconductor

IC GATE DRVR LOW-SIDE SOT23-5

30551

ISL2100AAR3Z-T

ISL2100AAR3Z-T

Intersil (Renesas Electronics America)

IC GATE DRVR HALF-BRIDGE 9DFN

0

DGD2012S8-13

DGD2012S8-13

Zetex Semiconductors (Diodes Inc.)

IC GATE DRV HALF-BRIDGE 8SO 2.5K

20042500

IRS21271PBF

IRS21271PBF

IR (Infineon Technologies)

IRS21271 - GATE DRIVER

250

TC4427EOA

TC4427EOA

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8SOIC

0

EL7158ISZ-T7

EL7158ISZ-T7

Intersil (Renesas Electronics America)

IC GATE DRVR HI/LOW SIDE 8SOIC

0

MIC4420CN

MIC4420CN

Roving Networks / Microchip Technology

6A-PEAK LOW-SIDE MOSFET DRIVER

0

BUK218-50DC,118

BUK218-50DC,118

NXP Semiconductors

NOW NEXPERIA BUK218-50DC - BUFFE

129

MAX620CWN

MAX620CWN

Analog Devices, Inc.

QUAD, HIGH-SIDE MOSFET DRIVER

1146

ADP3634ARHZ

ADP3634ARHZ

Analog Devices, Inc.

IC GATE DRVR LOW-SIDE 8MSOP

358

TMC6200-TA

TMC6200-TA

TRINAMIC Motion Control GmbH

IC GATE DRVR HALF-BRIDGE 48TQFP

123

UCC27200ADRCT

UCC27200ADRCT

Texas Instruments

IC GATE DRVR HALF-BRIDGE 9VSON

337

IR2104SPBF

IR2104SPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

1516

ISL89161FBEBZ

ISL89161FBEBZ

Intersil (Renesas Electronics America)

AND GATE BASED MOSFET DRIVER

4849

UC2707DWG4

UC2707DWG4

BUFFER/INVERTER BASED MOSFET DRI

40

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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