PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
ISL89165FBEAZ-T

ISL89165FBEAZ-T

Intersil (Renesas Electronics America)

IC GATE DRVR LOW-SIDE 8SOIC

5000

MAX627CPA+

MAX627CPA+

Maxim Integrated

IC GATE DRVR LOW-SIDE 8DIP

782100

IRS2003PBF

IRS2003PBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8DIP

142

DGD2181MS8-13

DGD2181MS8-13

Zetex Semiconductors (Diodes Inc.)

IC GATE DRVR HALF-BRIDGE 8SO

0

TC4428EUA

TC4428EUA

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8MSOP

0

TPS2828DBVRG4

TPS2828DBVRG4

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-5

0

IXRFD631-NRF

IXRFD631-NRF

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 30A

0

NCP5109ADR2G

NCP5109ADR2G

Sanyo Semiconductor/ON Semiconductor

IC GATE DRVR HALF-BRIDGE 8SOIC

1823

UCC27525DR

UCC27525DR

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

3808

MIC4452YN

MIC4452YN

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8DIP

289

IRS2111STRPBF

IRS2111STRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

0

UCC27321D

UCC27321D

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

80

MCP14A0901-E/SN

MCP14A0901-E/SN

Roving Networks / Microchip Technology

IC GATE DRVR HI/LOW SIDE 8SOIC

740

L6398DTR

L6398DTR

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 8SO

134085000

MCP14A0153-E/SN

MCP14A0153-E/SN

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8SOIC

267

AUIRS2191STR

AUIRS2191STR

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 16SOIC

1900

UCC27323P

UCC27323P

Texas Instruments

UCC27323 DUAL 4 A PEAK HIGH SPEE

392

IR2136JTRPBF

IR2136JTRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 44PLCC

500

MIC4126YMME-TR

MIC4126YMME-TR

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8MSOP

0

TC4424VMF

TC4424VMF

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8DFN

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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