PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
LT1160CS#TRPBF

LT1160CS#TRPBF

Analog Devices, Inc.

IC GATE DRVR HALF-BRIDGE 14SOIC

0

TC4422EMF

TC4422EMF

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8DFN

0

NCD57000DWR2G

NCD57000DWR2G

Sanyo Semiconductor/ON Semiconductor

IC GATE DRVR HALF-BRIDGE 16SOIC

191910000

EL7104CSZ-T13

EL7104CSZ-T13

Intersil (Renesas Electronics America)

IC GATE DRVR LOW-SIDE 8SOIC

0

ADUM4221-1CRIZ

ADUM4221-1CRIZ

Analog Devices, Inc.

ISO 1/2 BRIDGE DRV WPWM UVLO 11.

27

IR21064SPBF

IR21064SPBF

IR (Infineon Technologies)

HALF-BRIDGE BASED MOSFET DRIVER

1705

UCC27524P

UCC27524P

Texas Instruments

IC GATE DRVR LOW-SIDE 8DIP

69310000

IR2233STRPBF

IR2233STRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 28SOIC

0

IRS2301SPBF

IRS2301SPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

24350

IXDD604D2TR

IXDD604D2TR

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8DFN

0

PE29101A-X

PE29101A-X

pSemi

IC GATE DRVR HALF-BRIDGE DIE

0

IRS2005MTRPBF

IRS2005MTRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 14MLPQ

7184

L6399D

L6399D

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 8SO

0

IR2108PBF

IR2108PBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8DIP

0

UCC27511DBVT

UCC27511DBVT

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-6

0

2SC0108T2G0-17

2SC0108T2G0-17

Power Integrations

IC GATE DRVR HI/LOW SIDE MODULE

321

IXDD609PI

IXDD609PI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8DIP

0

LM5110-3SD

LM5110-3SD

Texas Instruments

BUFFER/INVERTER BASED PERIPHERAL

3190

LMG1205YFXT

LMG1205YFXT

Texas Instruments

IC GATE DRVR HALF-BRIDGE 12DSBGA

341710000

ISL6625AIRZ-T

ISL6625AIRZ-T

Intersil (Renesas Electronics America)

IC GATE DRVR HALF-BRIDGE 8DFN

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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