PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
MAX628ESA+

MAX628ESA+

Maxim Integrated

IC GATE DRVR LOW-SIDE 8SOIC

1885500

VLA541-01R

VLA541-01R

Powerex, Inc.

IC GATE DRVR LOW-SIDE MODULE

2

IRS44262SPBF

IRS44262SPBF

IR (Infineon Technologies)

IRS4426 - GATE DRIVER

320

MD1211LG-G

MD1211LG-G

Roving Networks / Microchip Technology

IC GATE DRVR HALF-BRIDGE 8SOIC

0

MIC4123YME-TR

MIC4123YME-TR

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8SOIC

0

HIP2106AIRZ

HIP2106AIRZ

Intersil (Renesas Electronics America)

IC GATE DRVR HALF-BRIDGE 10DFN

0

2ED21814S06JXUMA1

2ED21814S06JXUMA1

IR (Infineon Technologies)

IC LEVER SHIFTER DSO-14

2470

MAX17600ASA+T

MAX17600ASA+T

Maxim Integrated

IC GATE DRVR LOW-SIDE 8SOIC

7500

HIP2100IBZT

HIP2100IBZT

Intersil (Renesas Electronics America)

IC GATE DRVR HALF-BRIDGE 8SOIC

2500

2ED2108S06FXUMA1

2ED2108S06FXUMA1

IR (Infineon Technologies)

IC HALF BRIDGE GATE DRIVER 650V

2229

NCD5705BDR2G

NCD5705BDR2G

Sanyo Semiconductor/ON Semiconductor

GATE DRIVER WITH LOW UVLO THRESH

250020000

IRS2003STRPBF

IRS2003STRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

1469

LTC3900IS8#TRPBF

LTC3900IS8#TRPBF

Analog Devices, Inc.

IC GATE DRVR LOW-SIDE 8SOIC

0

L6386ED013TR

L6386ED013TR

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 14SO

46

HIP6603BCBZ

HIP6603BCBZ

Intersil (Renesas Electronics America)

HALF BRIDGE BASED MOSFET DRIVER,

799

IRS21281SPBF

IRS21281SPBF

IR (Infineon Technologies)

BUFFER/INVERTER BASED MOSFET DRI

32395

UCC21222DR

UCC21222DR

Texas Instruments

IC GATE DRVR HALF-BRIDGE 16SOIC

1497

HIP4081AIBT-HC

HIP4081AIBT-HC

80V/2.5A PEAK, HIGH FREQUENCY FU

176

LT1161CSW#PBF

LT1161CSW#PBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 20SOIC

1568

L6571BD

L6571BD

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 8SO

863

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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