Memory

Part Number	Description / PDF	Quantity
BQ2022ALPR Texas Instruments	IC EPROM 1KBIT SGL WIRE TO92-3	1434
TMS55161-70DGH Texas Instruments	VIDEO DRAM, 256KX16, 70NS PDSO64	58501
SMJ4161-15JDS Texas Instruments	VIDEO DRAM, 64KX1, 150NS, NMOS	1823
BQ4010YMA-85N Texas Instruments	IC NVSRAM 64KBIT PARALLEL 28DIP	538
BQ4011YMA-70 Texas Instruments	IC NVSRAM 256KBIT PARALLEL 28DIP	1357
BQ4014MB-85 Texas Instruments	IC NVSRAM 2MBIT PAR 32DIP MODULE	967
BQ4015YMA-70 Texas Instruments	IC NVSRAM 4MBIT PAR 32DIP MODULE	1921
SN74LS601ADW Texas Instruments	MEMORY CIRCUIT, 64KX1, TTL	1800
SN74AS870DW Texas Instruments	DUAL-PORT SRAM, 16X4, 15NS, TTL	161
TMS55161-60DGH Texas Instruments	VIDEO DRAM, 256KX16, 60NS PDSO64	4505
SMJ64C16S-70JDM Texas Instruments	STANDARD SRAM, 16KX1	71
TMS55166-70DGH Texas Instruments	VIDEO DRAM, 256KX16, 70NS PDSO64	1200
TMS55165-60DGH Texas Instruments	VIDEO DRAM, 256KX16, 60NS PDSO64	24304
SMJ64C64S-45JDM Texas Instruments	STANDARD SRAM, 64KX1	102
SN74ACT2150A-20NT Texas Instruments	CACHE TAG SRAM, 512X8, 20NS	2248
SMJ61CD16LA-35FGM Texas Instruments	STANDARD SRAM, 16KX1	142
TMS4161-15NL Texas Instruments	VIDEO DRAM, 64KX1, 150NS, NMOS	0
BQ2022DBZR Texas Instruments	IC EPROM 1KBIT SGL WIRE SOT23-3	5860
TMS4044-45NL Texas Instruments	STANDARD SRAM, 4KX1, 450NS, MOS,	4570
TMS27PC512-2FML Texas Instruments	OTP ROM, 64KX8, 200NS PQCC32	16893

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)