Memory

Part Number	Description / PDF	Quantity
SMJ4161-20JDS Texas Instruments	VIDEO DRAM, 64KX1, 200NS, NMOS	101
BQ4016MC-70 Texas Instruments	IC NVSRAM 8MBIT PAR 36DIP MODULE	688
JBP28L22MJ Texas Instruments	OTP ROM, 256X8, 75NS, BIPOLAR	1170
TMS4C1050-60DJ Texas Instruments	MEMORY CIRCUIT, CMOS, PDSO20	101
BQ4014YMB-85 Texas Instruments	IC NVSRAM 2MBIT PAR 32DIP MODULE	1733
TMS29F040-90C5FML Texas Instruments	FLASH, 512KX8, 90NS, PQCC32	389
BQ4010MA-85 Texas Instruments	IC NVSRAM 64KBIT PARALLEL 28DIP	0
SMJ5C1008-25JDCM Texas Instruments	STANDARD SRAM, 128KX8	0
BQ4011YMA-150N Texas Instruments	IC NVSRAM 256KBIT PARALLEL 28DIP	411
BQ4011LYMA-70N Texas Instruments	IC NVSRAM 256KBIT PARALLEL 28DIP	87
TMS27PC512-12FML Texas Instruments	OTP ROM, 64KX8, 120NS PQCC32	0
BQ4011MA-150 Texas Instruments	IC NVSRAM 256KBIT PARALLEL 28DIP	763
BQ4010YMA-70 Texas Instruments	IC NVSRAM 64KBIT PARALLEL 28DIP	35
TMS55165-70ADGH Texas Instruments	VIDEO DRAM, 256KX16, 70NS PDSO64	240
BQ4010MA-150 Texas Instruments	IC NVSRAM 64KBIT PARALLEL 28DIP	225
7704201FA Texas Instruments	SN54LS670 4-BY-4 REGISTER FILES	81
BQ4011MA-200 Texas Instruments	IC NVSRAM 256KBIT PARALLEL 28DIP	667
BQ4011YMA-150 Texas Instruments	IC NVSRAM 256KBIT PARALLEL 28DIP	3003
TMS6789-20N Texas Instruments	STANDARD SRAM, 16KX4	7700
SNJ54LS170J Texas Instruments	STANDARD SRAM, 4X4, 45NS, TTL	388

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)