Memory

Part Number	Description / PDF	Quantity
SN74LS170N Texas Instruments	STANDARD SRAM, 4X4, 45NS, TTL	6280
TMS6789-20DJ Texas Instruments	STANDARD SRAM, 16KX4, 20NS	7508
BQ4011YMA-200 Texas Instruments	IC NVSRAM 256KBIT PARALLEL 28DIP	594
BQ4013MA-85 Texas Instruments	IC NVSRAM 1MBIT PAR 32DIP MODULE	798
BQ2022ADBZRG4 Texas Instruments	IC EPROM 1KBIT SGL WIRE SOT23-3	0
BQ4010MA-200 Texas Instruments	IC NVSRAM 64KBIT PARALLEL 28DIP	2342
BQ2024DBZR Texas Instruments	IC EPROM 1.5KBIT SGL WIRE SOT23	59450
SN74ACT2152A-20FN Texas Instruments	CACHE TAG SRAM, 2KX8, 20NS	973
TMS55160-60DGH Texas Instruments	VIDEO DRAM, 256KX16, 60NS PDSO64	42371
TMS27PC291-3FNL Texas Instruments	OTP ROM, 2KX8, 35NS PQCC28	21979
BQ2026LPR Texas Instruments	IC EPROM 1.5KBIT SGL WIRE TO92-3	63521
BQ4014YMB-120 Texas Instruments	IC NVSRAM 2MBIT PAR 32DIP MODULE	1419
BQ2024DBZRG4 Texas Instruments	IC EPROM 1.5KBIT SGL WIRE SOT23	0
BQ4010YMA-70N Texas Instruments	IC NVSRAM 64KBIT PARALLEL 28DIP	2234
BQ2026DBZR Texas Instruments	IC EPROM 1.5KBIT SGL WIRE SOT23	17975
TMS55166-60DGH Texas Instruments	VIDEO DRAM, 256KX16, 60NS PDSO64	34502
BQ4015YMA-85 Texas Instruments	IC NVSRAM 4MBIT PAR 32DIP MODULE	3785
BQ4013YMA-85N Texas Instruments	IC NVSRAM 1MBIT PAR 32DIP MODULE	93
TMS2114L-15NL Texas Instruments	STANDARD SRAM, 1KX4	25859
BQ4013MA-120 Texas Instruments	IC NVSRAM 1MBIT PAR 32DIP MODULE	170

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)