Memory

Part Number	Description / PDF	Quantity
BQ4014MB-120 Texas Instruments	IC NVSRAM 2MBIT PAR 32DIP MODULE	5693
TMS62828L-85NW Texas Instruments	STANDARD SRAM, 128KX8	301
BQ2022ADBZR Texas Instruments	IC EPROM 1KBIT SGL WIRE SOT23-3	2163
TMS2114L-25NL Texas Instruments	STANDARD SRAM, 1KX4	1680
TMS55160-70DGH Texas Instruments	VIDEO DRAM, 256KX16, 70NS PDSO64	10399
TMS27C291-3JL Texas Instruments	UVPROM, 2KX8, 35NS, CMOS	5807
TMS2114-20NL Texas Instruments	STANDARD SRAM, 1KX4	13502
TMS27PC010A-12NL Texas Instruments	OTP ROM, 128KX8, 120NS PDIP32	880
TMS2114L-20NL Texas Instruments	STANDARD SRAM, 1KX4	52905
BQ4013LYMA-70N Texas Instruments	IC NVSRAM 1MBIT PAR 32DIP MODULE	509
TMS27PC256-2NL Texas Instruments	OTP ROM, 32KX8, 200NS PDIP28	4165
BQ4010YMA-85 Texas Instruments	IC NVSRAM 64KBIT PARALLEL 28DIP	303
TMS27PC512-120FML Texas Instruments	OTP ROM, 64KX8, 120NS PQCC32	0
TMS48C121-10DZ Texas Instruments	VIDEO DRAM, 128KX8, CMOS, PDSO40	276
TM27PC256-2NL Texas Instruments	OTP ROM, 32KX8, 200NS, PDIP28	0
TMS27PC256-15NE Texas Instruments	OTP ROM, 32KX8, 150NS PDIP28	7976
SN74ACT2160-17FM Texas Instruments	CACHE TAG SRAM, 16KX4, 17NS	49
BQ4010YMA-200 Texas Instruments	IC NVSRAM 64KBIT PARALLEL 28DIP	2269
SNJ54ALS870JT Texas Instruments	STANDARD SRAM, 16X4, 24NS	885
BQ4013YMA-85 Texas Instruments	IC NVSRAM 1MBIT PAR 32DIP MODULE	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)