Memory

Part Number	Description / PDF	Quantity
TMS27PC010-12NL Texas Instruments	OTP ROM, 128KX8, 120NS PDIP32	9293
SMJ64C16S-25JDM Texas Instruments	STANDARD SRAM, 16KX1	575
SM28VLT32SKGD3 Texas Instruments	IC FLASH 32MBIT SPI 12MHZ 0XCEPT	0
SMJ29F816FGM Texas Instruments	FLASH, 2KX8, CQCC18	1937
SMJ64C16S-35JDM Texas Instruments	DUAL MARKED (5962-8670503RA)	2539
SMJ61CD16SA-25JDM Texas Instruments	STANDARD SRAM, 16KX1	195
SMJ61CD16SA-35JDM Texas Instruments	STANDARD SRAM, 16KX1	281
SMJ61CD16LA-55JDM Texas Instruments	STANDARD SRAM, 16KX1	230
SMJ68CE16L-55JDM Texas Instruments	STANDARD SRAM, 2KX8, 55NS, CMOS	247
SMJ64C16S-45JDM Texas Instruments	STANDARD SRAM, 16KX1	1145
SMJ68CE16L-45JDM Texas Instruments	STANDARD SRAM, 2KX8, 45NS, CMOS	808
SMJ64C16L-25JDM Texas Instruments	STANDARD SRAM, 16KX1	647
HPA01220DBZR Texas Instruments	IC EPROM 1KB SERIAL SDQ SOT23-3	0
SMJ68CE16L-25JDM Texas Instruments	DUAL MARKED (5962-8874002LA)	1386
SMJ61CD16LA-70JDM Texas Instruments	STANDARD SRAM, 16KX1	306
SMJ68CE16S-55JDM Texas Instruments	DUAL MARKED (8403611LA)	1035
SMJ68CE16S-70JDM Texas Instruments	STANDARD SRAM, 2KX8, CMOS	264
BQ4016YMC-70 Texas Instruments	IC NVSRAM 8MBIT PAR 36DIP MODULE	0
BQ4011YMA-70N Texas Instruments	IC NVSRAM 256KBIT PARALLEL 28DIP	0
BQ4010YMA-150N Texas Instruments	IC NVSRAM 64KBIT PARALLEL 28DIP	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)