Memory

Part Number	Description / PDF	Quantity
TMS27PC256-17FML Texas Instruments	OTP ROM, 32KX8, 170NS PQCC32	43231
SN74LS600ADW Texas Instruments	MEMORY CIRCUIT, 16KX1, TTL	516
BQ4010MA-70 Texas Instruments	IC NVSRAM 64KBIT PARALLEL 28DIP	3102
TMS27C291-35JL Texas Instruments	UVPROM, 2KX8, 35NS, CMOS	28037
TMS55166-70ADGH Texas Instruments	VIDEO DRAM 256KX16 60NS PDSO64	8313
SM28VLT32SHKN Texas Instruments	IC FLASH 32MBIT SPI 12MHZ 14CFP	25
SMJ61CD16SA-70JDM Texas Instruments	STANDARD SRAM, 16KX1	81
SMJ68CE16L-70JDM Texas Instruments	STANDARD SRAM, 2KX8, CMOS	51
BQ4017YMC-70 Texas Instruments	IC NVSRAM 16MBIT PAR 36DIP MOD	739
BQ4010LYMA-70N Texas Instruments	IC NVSRAM 64KBIT PARALLEL 28DIP	182
SN74172N Texas Instruments	MULTI-PORT SRAM, 8X2, 50NS	3416
TMS55161-70ADGH Texas Instruments	VIDEO DRAM, 256KX16, 70NS PDSO64	184
SMJ61CD16-45JDM Texas Instruments	STANDARD SRAM, 16KX1, 45NS	50
SMJ61CD16SA-45JDM Texas Instruments	STANDARD SRAM, 16KX1	84
BQ2022LPR Texas Instruments	IC EPROM 1KBIT SGL WIRE TO92-3	445985
TMS6787-15N Texas Instruments	STANDARD SRAM, 64KX1, 15NS,	9777
TMS2114-45NL Texas Instruments	STANDARD SRAM, 1KX4	7549
SN54170J Texas Instruments	STANDARD SRAM, 4X4, 40NS	0
TMS6787-20N Texas Instruments	STANDARD SRAM, 64KX1, 20NS,	4037
7704201EA Texas Instruments	SN54LS670 4-BY-4 REGISTER FILES	51

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)