Memory

Part Number	Description / PDF	Quantity
CY7C1474BV33-167BGI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 209FBGA	183
CY7C1460AV25-167BZXI IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	43
CY7C1399BN-15VXC IR (Infineon Technologies)	IC SRAM 256KBIT PARALLEL 28SOJ	609
CY7C1411KV18-250BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	11
CY14B101K-SP45XC IR (Infineon Technologies)	IC NVSRAM 1MBIT PARALLEL 48SSOP	1123
CY7C1521KV18-250BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	113
S25FL256LDPBHV020 IR (Infineon Technologies)	IC FLASH 256MBIT SPI/QUAD 24BGA	164
CY7C1444AV33-167AXC IR (Infineon Technologies)	CACHE SRAM, 1MX36, 3.4NS PQFP100	0
CY7C1620KV18-333BZXI IR (Infineon Technologies)	IC SRAM 144MBIT PARALLEL 165FBGA	86
STK17TA8-RF45 IR (Infineon Technologies)	IC NVSRAM 1MBIT PARALLEL 48SSOP	3611
STK12C68-5L55M IR (Infineon Technologies)	IC NVSRAM 64KBIT PARALLEL 28LCC	207
CYDM128B08-55BVXI IR (Infineon Technologies)	IC SRAM 128KBIT PAR 100VFBGA	6050
CY62256VLL-70ZXC IR (Infineon Technologies)	IC SRAM 256KBIT PAR 28TSOP I	0
CY7C136-55NC IR (Infineon Technologies)	IC SRAM 16KBIT PARALLEL 52PQFP	0
STK14D88-RF45 IR (Infineon Technologies)	IC NVSRAM 256KBIT PAR 48SSOP	967
CY14B256Q2A-SXIT IR (Infineon Technologies)	IC NVSRAM 256KBIT SPI 8SOIC	2500
CY7C09199V-9AXC IR (Infineon Technologies)	IC SRAM 1.152MBIT PAR 100TQFP	376
CY7C09099V-12AXC IR (Infineon Technologies)	DUAL-PORT SRAM, 128KX8, 25NS, CM	45
S70FS01GSAGMFI010 IR (Infineon Technologies)	IC FLASH 1GBIT SPI/QUAD 16SOIC	107
CY7C1423SV18-250BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	3399

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)