Memory

Part Number	Description / PDF	Quantity
CY7C1315KV18-333BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	119
CY62136VLL-70ZSXE IR (Infineon Technologies)	IC SRAM 2MBIT PARALLEL 44TSOP II	1066
S29GL128N11FFA023 IR (Infineon Technologies)	IC FLASH 128MBIT PARALLEL 64FBGA	1650
CY7C25682KV18-550BZXI IR (Infineon Technologies)	DDR SRAM, 2MX36, 0.45NS PBGA165	264
CY7C1512KV18-333BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	24
CY7C1314KV18-300BZXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	119
CY7C0831AV-167AXC IR (Infineon Technologies)	IC SRAM 2MBIT PARALLEL 120TQFP	494
CY7C1518KV18-300BZI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	2585
CY7C1411BV18-250BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	96
CY7C09389V-6AXC IR (Infineon Technologies)	IC SRAM 1.152MBIT PAR 100TQFP	121
CY62128BNLL-70SXA IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 32SOIC	5930
CY7C1399B-15VC IR (Infineon Technologies)	IC SRAM 256KBIT PARALLEL 28SOJ	6672
CY7C1471BV25-133BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	106
CY7C188-20VC IR (Infineon Technologies)	IC SRAM 288KBIT PARALLEL 32SOJ	0
CY62148BLL-70ZXI IR (Infineon Technologies)	IC SRAM 4MBIT 70NS 32TSOP	0
CY62126DV30L-55ZSXE IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 44TSOP II	1266
CY7C1481BV33-133BZXC IR (Infineon Technologies)	CACHE SRAM, 2MX36, 6.5NS PBGA165	537
S25FL128SAGBHI310 IR (Infineon Technologies)	IC FLASH 128MBIT SPI/QUAD 24BGA	570
CY7C12681KV18-400BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	138
CY7C1319KV18-250BZXC IR (Infineon Technologies)	DDR SRAM, 1MX18, 0.45NS PBGA165	95

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)