Memory

Part Number	Description / PDF	Quantity
CY7C1354SV25-166AXC IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 100TQFP	1014
CY7C135-15JXC IR (Infineon Technologies)	DUAL-PORT SRAM 4KX8 15NS PQCC52	771
CY7C1265KV18-400BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	278
CY7C1370D-250AXC IR (Infineon Technologies)	ZBT SRAM, 512KX36, 2.6NS PQFP100	0
CYD18S18V18-200BBAXI IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 256FBGA	3
CY7C1520KV18-250BZI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	733
CY7C1420KV18-333BZI IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	233
CY7C1021BN-12ZXCT IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 44TSOP II	0
CY7C1049CV33-8ZSXC IR (Infineon Technologies)	STANDARD SRAM	82
CY7C1059DV33-12ZSXI IR (Infineon Technologies)	IC SRAM 8MBIT PARALLEL 44TSOP II	489
CY7C1515V18-167BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	31
CY14B104N-BA25XI IR (Infineon Technologies)	IC NVSRAM 4MBIT PARALLEL 48FBGA	331
CY7C1011CV33-10ZSXA IR (Infineon Technologies)	IC SRAM 2MBIT PARALLEL 44TSOP II	1599
S29GL01GT10GHI010 IR (Infineon Technologies)	IC FLASH 1GBIT PARALLEL 56FBGA	270
CY7C1413JV18-250BZI IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	1049
S25FL256SAGBHI310 IR (Infineon Technologies)	FLASH, 64MX4, PBGA24	540
CY7C1668KV18-550BZXC IR (Infineon Technologies)	IC SRAM 144MBIT PARALLEL 165FBGA	205
CY7C1512KV18-250BZXI IR (Infineon Technologies)	QDR SRAM, 4MX18, 0.45NS PBGA165	1242
CY7C25652KV18-500BZXI IR (Infineon Technologies)	QDR SRAM, 2MX36, 0.45NS PBGA165	610
CY7C1355C-133BGC IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 119PBGA	618

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)