Memory

Part Number	Description / PDF	Quantity
CY7C025-25AXC IR (Infineon Technologies)	IC SRAM 128KBIT PARALLEL 100TQFP	1043
CY7C1462AV25-200AXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 100TQFP	107
CY62256L-70SNC IR (Infineon Technologies)	IC SRAM 256KBIT PARALLEL 28SOIC	904
CY7C1550KV18-400BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	86
CY62256NL-70SNXI IR (Infineon Technologies)	IC SRAM 256KBIT PARALLEL 28SOIC	7364
CY7C1648KV18-400BZXC IR (Infineon Technologies)	IC SRAM 144MBIT PARALLEL 165FBGA	81
CY7C1021CV33-12ZSXET IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 44TSOP II	1127
CY7C1470V33-167BZXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	194
CY7C1399BNL-15VXC IR (Infineon Technologies)	IC SRAM 256KBIT PARALLEL 28SOJ	28523
CY7C056V-15AXC IR (Infineon Technologies)	DUAL-PORT SRAM, 16KX36, 15NS, CM	525
CY7C2565KV18-500BZI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	16
CY7C1318CV18-278BZXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	399
CY7C1041BN-20ZSXA IR (Infineon Technologies)	STANDARD SRAM, 256KX16, 20NS PDS	1854
CY62136FV30LL-55ZSXE IR (Infineon Technologies)	IC SRAM 2MBIT PARALLEL 44TSOP II	4701
S34ML01G100TFI000 IR (Infineon Technologies)	FLASH, 128MX8, 25NS, PDSO48	0
CY7C1570KV18-400BZXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	1854
CY62148G30-45SXI IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 32SOIC	75
STK14C88-3NF35TR IR (Infineon Technologies)	IC NVSRAM 256KBIT PAR 32SOIC	4102
CY7C1512V18-250BZXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	408
CY7C1381D-100BZXI IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)