Memory

Part Number	Description / PDF	Quantity
CY14B101L-SZ45XC IR (Infineon Technologies)	IC NVSRAM 1MBIT PARALLEL 32SOIC	9231
S29AS008J70BFA040 IR (Infineon Technologies)	PARALLEL NOR FLASH 512KX16 70NS	1845
CY7C1512AV18-200BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	3
CY7C1474BV25-167BGC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 209FBGA	103
CY7C1315JV18-300BZXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	588
CY7C1041CV33-12ZXC IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 44TSOP II	5286
S29GL512S11TFB010 IR (Infineon Technologies)	IC FLASH 512MBIT PARALLEL 56TSOP	90
CY7C1520KV18-333BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	574
CY7C1263KV18-400BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	223
CY62256LL-70SNXC IR (Infineon Technologies)	IC SRAM 256KBIT PARALLEL 28SOIC	791
CY7C109BN-20ZXC IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 32TSOP I	0
CY14MB064Q1A-SXI IR (Infineon Technologies)	NON-VOLATILE SRAM, 8KX8, CMOS, P	3358
CY14B256KA-SP25XI IR (Infineon Technologies)	IC NVSRAM 256KBIT PAR 48SSOP	0
CY62126EV30LL-55ZSXE IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 44TSOP II	8137
CY7C1418BV18-167BZC IR (Infineon Technologies)	DDR SRAM, 2MX18, 0.5NS, CMOS, PB	256
CY7C1356SV25-166AXC IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 100TQFP	389
CY7C1512V18-200BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	651
CY7C1380D-167BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	1811
CY15B128J-SXA IR (Infineon Technologies)	IC FRAM 128KBIT I2C 3.4MHZ 8SOIC	148
CY7C1520KV18-333BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	4641

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)