Memory

Part Number	Description / PDF	Quantity
CY7C1360C-200BGC IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 119PBGA	0
CY7C1415AV18-200BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	141
CY7C1399BN-15VXAT IR (Infineon Technologies)	IC SRAM 256KBIT PARALLEL 28SOJ	8036
CY7C1387D-167BZI IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	1278
CY7C109D-10ZXIT IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 32TSOP I	1500
CY7C1020CV33-15ZC IR (Infineon Technologies)	IC SRAM 512KBIT PAR 44TSOP II	0
CY7C1320KV18-300BZXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	1671
STK14D88-NF45I IR (Infineon Technologies)	NON-VOLATILE SRAM, 32KX8, 45NS P	1036
CY14B104L-BA20XC IR (Infineon Technologies)	IC NVSRAM 4MBIT PARALLEL 48FBGA	299
CY62147EV30LL-55ZSXE IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 44TSOP II	0
CY7C1041CV33-15ZXC IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 44TSOP II	423
CY7C2563KV18-400BZXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	29
CY7C1514V18-167BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	576
CY62148EV30LL-55ZSXE IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 32SOIC	1179
S29GL128N11TFVR10 IR (Infineon Technologies)	IC FLASH 128MBIT PARALLEL 56TSOP	91
CY62256L-70SNXC IR (Infineon Technologies)	IC SRAM 256KBIT PARALLEL 28SOIC	6897
CY7C1270XV18-600BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	193
CY7C1512V18-167BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	83
S29GL256S10DHB020 IR (Infineon Technologies)	IC FLASH 256MBIT PARALLEL 64FBGA	50
CY7C1565KV18-450BZXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	819

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)