Memory

Part Number	Description / PDF	Quantity
CY7C1268KV18-450BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	813
CY7C1460AV33-167AXCT IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 100TQFP	18
CY62136EV30LL-45BVXIT IR (Infineon Technologies)	IC SRAM 2MBIT PARALLEL 48VFBGA	666
CY7C1021DV33-10ZSXA IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 44TSOP II	0
CY7C0851AV-133AXI IR (Infineon Technologies)	IC SRAM 2MBIT PARALLEL 176TQFP	237
CY7C1460AV33-250BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	252
CY7C1313CV18-200BZXI IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	261
S25FL256LAGNFB010 IR (Infineon Technologies)	IC FLASH 256MBIT SPI/QUAD 8WSON	140
CY7C1515V18-167BZXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	187
CY7C1414TV18-167BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	2896
CY7C1426JV18-300BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	848
CY7C09099V-12AC IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 100TQFP	279
CY7C1263XV18-600BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	120
CY7C026AV-20AXI IR (Infineon Technologies)	IC SRAM 256KBIT PARALLEL 100TQFP	0
S29CD032J1JFAM010 IR (Infineon Technologies)	IC FLASH 32MBIT PARALLEL 80FBGA	2371
CY14B256K-SP35XC IR (Infineon Technologies)	IC NVSRAM 256KBIT PAR 48SSOP	1624
CY7C1168V18-375BZXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	355
CY7C1525KV18-333BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	1528
S25FL132K0XMFV011 IR (Infineon Technologies)	IC FLASH 32MBIT SPI/QUAD 8SOIC	0
CY7C1312LV18-300BZXI IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	50

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)