Memory

Part Number	Description / PDF	Quantity
CY7C1518KV18-250BZXC IR (Infineon Technologies)	DDR SRAM, 4MX18, 0.45NS PBGA165	631
CY7C1415TV18-200BZI IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	365
CY62167GN30-45BVXI IR (Infineon Technologies)	IC SRAM 16MBIT PARALLEL 48BGA	73
CY62128EV30LL-45ZXAT IR (Infineon Technologies)	STANDARD SRAM, 128KX8, 45NS PDSO	1500
S29GL256P90FFCR20 IR (Infineon Technologies)	IC FLASH 256MBIT PARALLEL 64FBGA	60
CY62256NLL-55ZXET IR (Infineon Technologies)	IC SRAM 256KBIT PAR 28TSOP I	509
CY7C1041BNV33L-12ZXC IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 44TSOP II	813
CYD02S36VA-167BBC IR (Infineon Technologies)	DUAL-PORT SRAM, 64KX36, 4.4NS PB	345
CY7C1356CV25-200AXC IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 100TQFP	358
CY7C0241-15AXI IR (Infineon Technologies)	IC SRAM 72KBIT PARALLEL 100TQFP	302
CY7C1426KV18-250BZXC IR (Infineon Technologies)	QDR SRAM, 4MX9, 0.45NS PBGA165	1138
CY7C024BV-15AXI IR (Infineon Technologies)	IC SRAM 64KBIT PARALLEL 100TQFP	67
CY7C1460AV33-200AXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 100TQFP	73
CY14MB064Q2B-SXI IR (Infineon Technologies)	IC NVSRAM 64KBIT SPI 40MHZ 8SOIC	135
CY7C1312BV18-200BZI IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	435
CY7C1548KV18-400BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	288
CY62147G30-45ZSXI IR (Infineon Technologies)	STANDARD SRAM, 256KX16, 45NS, CM	105
CY7C1313CV18-250BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	54
CY7C199CN-20ZXI IR (Infineon Technologies)	IC SRAM 256KBIT PAR 28TSOP I	2077
CY14E256LA-SZ45XI IR (Infineon Technologies)	IC NVSRAM 256KBIT PAR 32SOIC	261

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)